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DC Field | Value | Language |
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dc.contributor.author | Rao, K. D. M. | |
dc.contributor.author | Sagade, Abhay A. | |
dc.contributor.author | John, Robin | |
dc.contributor.author | Pradeep, T. | |
dc.contributor.author | Kulkarni, G. U. | |
dc.date.accessioned | 2017-01-24T06:23:58Z | - |
dc.date.available | 2017-01-24T06:23:58Z | - |
dc.date.issued | 2016 | |
dc.identifier.citation | Rao, K. D. M.; Sagade, A. A.; John, R.; Pradeep, T.; Kulkarni, G. U., Defining Switching Efficiency of Multilevel Resistive Memory with PdO as an Example. Advanced Electronic Materials 2016, 2 (2), 9 http://dx.doi.org/10.1002/aelm.201500286 | en_US |
dc.identifier.citation | Advanced Electronic Materials | en_US |
dc.identifier.citation | 2 | en_US |
dc.identifier.citation | 2 | en_US |
dc.identifier.issn | 2199-160X | |
dc.identifier.uri | https://libjncir.jncasr.ac.in/xmlui/10572/2135 | - |
dc.description | Restricted Access | en_US |
dc.description.abstract | Resistive random access memory (RRAM) is the most promising candidate for next generation nonvolatile memory. In this article, resistive switching in PdO thin film is investigated. The fabricated in-plane devices showed voltage pulse induced multilevel resistive switching (MRS) with as many as five states under ambient conditions with high degrees of retention and endurance. The I-V characteristics of the different memory states are linear and only a small reading voltage (approximate to 10 mV) is necessary. Raman mapping of PdO (B-1g mode, 650 cm(-1)) and temperature-dependent electrical transport measurements provide an insight into possible redox mechanism involving PdO/Pd particles. For the first time, the switching efficiency of a MRS device is uniquely defined in terms of a parameter called "multiplex number (M)," which is the sum of the total number of memory states and the ratio between the number of switching events observed in a device and the total number of possible switching events. The present PdO MRS device exhibits the highest M value compared to the values evaluated from the literature examples. Such high performance MRS in PdO devices makes them potential candidates for RRAM and neuromorphic circuit applications. | en_US |
dc.description.uri | http://dx.doi.org/10.1002/aelm.201500286 | en_US |
dc.language.iso | English | en_US |
dc.publisher | Wiley-Blackwell | en_US |
dc.rights | @Wiley-Blackwell, 2016 | en_US |
dc.subject | Materials Science | en_US |
dc.subject | Physics | en_US |
dc.subject | Random-Access Memory | en_US |
dc.subject | Cell | en_US |
dc.title | Defining Switching Efficiency of Multilevel Resistive Memory with PdO as an Example | en_US |
dc.type | Article | en_US |
Appears in Collections: | Research Articles (Kulkarni, G. U.) |
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