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dc.contributor.authorRao, K. D. M.
dc.contributor.authorSagade, Abhay A.
dc.contributor.authorJohn, Robin
dc.contributor.authorPradeep, T.
dc.contributor.authorKulkarni, G. U.
dc.identifier.citationRao, K. D. M.; Sagade, A. A.; John, R.; Pradeep, T.; Kulkarni, G. U., Defining Switching Efficiency of Multilevel Resistive Memory with PdO as an Example. Advanced Electronic Materials 2016, 2 (2), 9
dc.identifier.citationAdvanced Electronic Materialsen_US
dc.descriptionRestricted Accessen_US
dc.description.abstractResistive random access memory (RRAM) is the most promising candidate for next generation nonvolatile memory. In this article, resistive switching in PdO thin film is investigated. The fabricated in-plane devices showed voltage pulse induced multilevel resistive switching (MRS) with as many as five states under ambient conditions with high degrees of retention and endurance. The I-V characteristics of the different memory states are linear and only a small reading voltage (approximate to 10 mV) is necessary. Raman mapping of PdO (B-1g mode, 650 cm(-1)) and temperature-dependent electrical transport measurements provide an insight into possible redox mechanism involving PdO/Pd particles. For the first time, the switching efficiency of a MRS device is uniquely defined in terms of a parameter called "multiplex number (M)," which is the sum of the total number of memory states and the ratio between the number of switching events observed in a device and the total number of possible switching events. The present PdO MRS device exhibits the highest M value compared to the values evaluated from the literature examples. Such high performance MRS in PdO devices makes them potential candidates for RRAM and neuromorphic circuit applications.en_US
dc.rights@Wiley-Blackwell, 2016en_US
dc.subjectMaterials Scienceen_US
dc.subjectRandom-Access Memoryen_US
dc.titleDefining Switching Efficiency of Multilevel Resistive Memory with PdO as an Exampleen_US
Appears in Collections:Research Articles (Kulkarni, G. U.)

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