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DC Field | Value | Language |
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dc.contributor.author | Sahu, Rajib | |
dc.contributor.author | Gholap, Hari Bhau | |
dc.contributor.author | Mounika, Gandi | |
dc.contributor.author | Dileep, Krishnan | |
dc.contributor.author | Vishal, Badri | |
dc.contributor.author | Ghara, Somnath | |
dc.contributor.author | Datta, Ranjan | |
dc.date.accessioned | 2017-01-24T06:28:26Z | - |
dc.date.available | 2017-01-24T06:28:26Z | - |
dc.date.issued | 2016 | |
dc.identifier.citation | Sahu, R.; Gholap, H. B.; Mounika, G.; Dileep, K.; Vishal, B.; Ghara, S.; Datta, R., Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film. Physica Status Solidi B-Basic Solid State Physics 2016, 253 (3), 504-508 http://dx.doi.org/10.1002/pssb.201552625 | en_US |
dc.identifier.citation | Physica Status Solidi B-Basic Solid State Physics | en_US |
dc.identifier.citation | 253 | en_US |
dc.identifier.citation | 3 | en_US |
dc.identifier.issn | 0370-1972 | |
dc.identifier.uri | https://libjncir.jncasr.ac.in/xmlui/10572/2172 | - |
dc.description | Restricted Access | en_US |
dc.description.abstract | We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (similar to 10(-1) Torr) shows p-type conductivity with a carrier concentration of similar to 3 x 10(16) cm(-3). This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V-O) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (similar to 10(-5) Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | en_US |
dc.description.uri | 1521-3951 | en_US |
dc.description.uri | http://dx.doi.org/10.1002/pssb.201552625 | en_US |
dc.language.iso | English | en_US |
dc.publisher | Wiley-V C H Verlag Gmbh | en_US |
dc.rights | @Wiley-V C H Verlag Gmbh, 2016 | en_US |
dc.subject | Physics | en_US |
dc.subject | ZnO | en_US |
dc.subject | thins films | en_US |
dc.subject | doping | en_US |
dc.subject | p-type conductivity | en_US |
dc.subject | density functional theory | en_US |
dc.subject | pulsed laser deposition | en_US |
dc.subject | Pulsed-Laser Deposition | en_US |
dc.subject | Electronic-Structure | en_US |
dc.subject | Phase-Separation | en_US |
dc.subject | Zinc-Oxide | en_US |
dc.subject | Photoluminescence | en_US |
dc.subject | Semiconductors | en_US |
dc.subject | Gap | en_US |
dc.title | Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film | en_US |
dc.type | Article | en_US |
Appears in Collections: | Research Articles (Ranjan Datta) |
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