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DC Field | Value | Language |
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dc.contributor.author | Roychowdhury, Subhajit | |
dc.contributor.author | Ghara, Somnath | |
dc.contributor.author | Guin, Satya N. | |
dc.contributor.author | Sundaresan, A. | |
dc.contributor.author | Biswas, Kanishka | |
dc.date.accessioned | 2017-01-24T06:36:53Z | - |
dc.date.available | 2017-01-24T06:36:53Z | - |
dc.date.issued | 2016 | |
dc.identifier.citation | Roychowdhury, S.; Ghara, S.; Guin, S. N.; Sundaresan, A.; Biswas, K., Large linear magnetoresistance in topological crystalline insulator Pb0.6Sn0.4Te. Journal of Solid State Chemistry 2016, 233, 199-204 http://dx.doi.org/10.1016/j.jssc.2015.10.029 | en_US |
dc.identifier.citation | Journal of Solid State Chemistry | en_US |
dc.identifier.citation | 233 | en_US |
dc.identifier.issn | 0022-4596 | |
dc.identifier.uri | https://libjncir.jncasr.ac.in/xmlui/10572/2210 | - |
dc.description | Restricted Access | en_US |
dc.description.abstract | Classical magnetoresistance generally follows the quadratic dependence of the magnetic field at lower field and finally saturates when field is larger. Here, we report the large positive non-saturating linear magnetoresistance in topological crystalline insulator, Pb0.6Sn0.4Te, at different temperatures between 3 K and 300 K in magnetic field up to 9 T. Magnetoresistance value as high as similar to 200% was achieved at 3 K at magnetic field of 9 T. Linear magnetoresistance observed in Pb0.6Sn0.4Te is mainly governed by the spatial fluctuation carrier mobility due to distortions in the current paths in inhomogeneous conductor. (C) 2015 Elsevier Inc. All rights reserved. | en_US |
dc.description.uri | 1095-726X | en_US |
dc.description.uri | http://dx.doi.org/10.1016/j.jssc.2015.10.029 | en_US |
dc.language.iso | English | en_US |
dc.publisher | Academic Press Inc Elsevier Science | en_US |
dc.rights | @Academic Press Inc Elsevier Science, 2016 | en_US |
dc.subject | Chemistry | en_US |
dc.subject | Topological crystalline insulator | en_US |
dc.subject | Lead tin telluride | en_US |
dc.subject | Linear magnetoresistance | en_US |
dc.subject | Band inversion | en_US |
dc.subject | Solid solution | en_US |
dc.subject | Performance Bulk Thermoelectrics | en_US |
dc.subject | Giant Magnetoresistance | en_US |
dc.subject | Colossal Magnetoresistance | en_US |
dc.subject | Nonsaturating Magnetoresistance | en_US |
dc.subject | Bi2Te3 | en_US |
dc.subject | Snte | en_US |
dc.subject | Oscillations | en_US |
dc.subject | Convergence | en_US |
dc.subject | Transition | en_US |
dc.subject | Graphene | en_US |
dc.title | Large linear magnetoresistance in topological crystalline insulator Pb0.6Sn0.4Te | en_US |
dc.type | Article | en_US |
Appears in Collections: | Research Articles (Sundaresan A.) Research Papers (Kaniska Biswas) |
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