Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/2269
Title: High-temperature large-gap quantum anomalous Hall insulating state in ultrathin double perovskite films
Authors: Baidya, Santu
Waghmare, Umesh V.
Paramekanti, Arun
Saha-Dasgupta, Tanusri
Keywords: Physics
Localized Wannier Functions
Augmented-Wave Method
Topological Insulator
Realization
Issue Date: 2016
Publisher: American Physical Society
Citation: Baidya, S.; Waghmare, U. V.; Paramekanti, A.; Saha-Dasgupta, T., High-temperature large-gap quantum anomalous Hall insulating state in ultrathin double perovskite films. Physical Review B 2016, 94 (15), 8 http://dx.doi.org/10.1103/PhysRevB.94.155405
ACS Applied Materials & Interfaces
94
15
Abstract: Towards the goal of realizing topological phases in thin films of correlated oxide and heterostructures, we propose here a quantum anomalous Hall insulator (QAHI) in ultrathin films of double perovskites based on mixed 3d-5d or 3d-4d transition-metal ions, grown along the [111] direction. Considering the specific case of ultrathin Ba2FeReO6, we present a theoretical analysis of an effective Hamiltonian derived from first principles. We establish that a strong spin-orbit coupling at the Re site, t(2g) symmetry of the low-energy d bands, polarity of its [111] orientation of perovskite structure, andmixed 3d-5d chemistry results in room temperature magnetism with a robust QAHI state of Chern number C = 1 and a large band gap. We uncover and highlight a nonrelativistic orbital Rashba-type effect in addition to the spin-orbit coupling, that governs this QAHI state. With a band gap of similar to 100 meV in electronic structure and magnetic transition temperature T-c similar to 300 K estimated by Monte Carlo simulations, our finding of the QAHI state in ultrathin Ba2FeReO6 is expected to stimulate experimental verification along with possible practical applications of its dissipationless edge currents.
Description: Restricted Access
URI: https://libjncir.jncasr.ac.in/xmlui/10572/2269
ISSN: 2469-9950
Appears in Collections:Research Articles (Umesh V. Waghmare)

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