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dc.contributor.authorRadha, B.
dc.contributor.authorSagade, Abhay A.
dc.contributor.authorKulkarni, G. U.
dc.identifier.citationRadha, B; Sagade, AA; Kulkarni, GU, Metal-organic molecular device for non-volatile memory storage. Applied Physics Letters 2014, 105 (8), 83103
dc.identifier.citationApplied Physics Lettersen_US
dc.descriptionRestricted Accessen_US
dc.description.abstractNon-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit nonvolatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film. (C) 2014 AIP Publishing LLC.en_US
dc.publisherAmerican Institute of Physicsen_US
dc.rights@American Institute of Physics, 2014en_US
dc.subjectApplied Physicsen_US
dc.subjectResistive Switchesen_US
dc.subjectBeam Lithographyen_US
dc.subjectPd Nanowiresen_US
dc.titleMetal-organic molecular device for non-volatile memory storageen_US
Appears in Collections:Research Articles (Kulkarni, G. U.)

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