Single CuTCNQ charge transfer complex nanowire as ultra high responsivity photo-detector

Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/2397

Title:	Single CuTCNQ charge transfer complex nanowire as ultra high responsivity photo-detector
Authors:	Basori, Rabaya Das, K. Kumar, Prashant Narayan, K. S. Raychaudhuri, A. K.
Keywords:	Optics Thin-Films Photoconductivity Photodetectors Fabrication
Issue Date:	2014
Publisher:	Optical Society American
Citation:	Basori, R; Das, K; Kumar, P; Narayan, KS; Raychaudhuri, AK, Single CuTCNQ charge transfer complex nanowire as ultra high responsivity photo-detector. Optics Express 2014, 22 (5) 4944-4952, http://dx.doi.org/10.1364/OE.22.004944 Optics Express 22 5
Abstract:	We report ultra large photo responsivity R (ratio of photo-generated current to absorbed power) in a single nanowire (NW) device made from a single strand of a nanowire (diameter similar to 30nm and length similar to 200nm) of an organomettalic semiconducting charge transfer complex material of CuTCNQ. The device shows responsivity of 8x10(4) A/Watt at 1 volt applied bias with an enhancement over the dark current exceeding 10(5) at zero bias. The observed photo current has a spectral dependence that strongly follows the main absorption peak (close to 405 nm) showing the primary role of absorbed photo-generated carriers. (C) 2014 Optical Society of America
Description:	Restricted Access
URI:	https://libjncir.jncasr.ac.in/xmlui/10572/2397
ISSN:	1094-4087
Appears in Collections:	Research Articles (Narayan K. S.)

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