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dc.contributor.authorSenanayak, Satyaprasad P.
dc.contributor.authorNarayan, K. S.
dc.date.accessioned2017-02-21T07:00:14Z-
dc.date.available2017-02-21T07:00:14Z-
dc.date.issued2014
dc.identifier.citationSenanayak, SP; Narayan, KS, Strategies for Fast-Switching in All-Polymer Field Effect Transistors. Advanced Functional Materials 2014, 24 (22) 3324-3331, http://dx.doi.org/10.1002/adfm.201303374en_US
dc.identifier.citationAdvanced Functional Materialsen_US
dc.identifier.citation24en_US
dc.identifier.citation22en_US
dc.identifier.issn1616-301X
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/2398-
dc.descriptionRestricted Accessen_US
dc.description.abstractLow-cost printable field effect transistors (FETs) are typically associated with slow switching characteristics. Dynamic response of polymer field effect transistors (PFETs) is a manifestation of time scales involved in processes such as dielectric polarization, structural relaxation, and transport via disordered-interfacial states. A range of dielectrics and semiconductors are studied to arrive at a parameter which serves as a figure of merit and quantifies the different processes contributing to the switching response. A cross-over from transport limiting factors to dielectric limiting factors in the dynamics of PFETs is observed. The dielectric limited regime in the PFET dynamics is tapped in to explore high speed processes, and an enhancement of switching speed by three orders of magnitude (from 300 s to 400 ns) is observed at channel lengths which can be accessed by low cost printing methods. The device structure utilizes polymer-ferroelectrics (FE) as the dielectric layer and involves a fabrication-procedure which assists in circumventing the slow dynamics within the bulk of FE. This method of enhancing the dynamic response of PFETs is universally applicable to all classes of disordered-FE.en_US
dc.description.uri1616-3028en_US
dc.description.urihttp://dx.doi.org/10.1002/adfm.201303374en_US
dc.language.isoEnglishen_US
dc.publisherWiley-V C H Verlag Gmbhen_US
dc.rights@Wiley-V C H Verlag Gmbh, 2014en_US
dc.subjectChemistryen_US
dc.subjectPhysical Chemistryen_US
dc.subjectNanoscience & Nanotechnologyen_US
dc.subjectMaterials Scienceen_US
dc.subjectApplied Physicsen_US
dc.subjectCondensed Matter Physicsen_US
dc.subjectPolymer Transistorsen_US
dc.subjectFast Switchingen_US
dc.subjectFerroelectricsen_US
dc.subjectThin-Film Transistorsen_US
dc.subjectMobilityen_US
dc.subjectVoltageen_US
dc.subjectFerroelectricsen_US
dc.subjectPolarizationen_US
dc.subjectMemoryen_US
dc.titleStrategies for Fast-Switching in All-Polymer Field Effect Transistorsen_US
dc.typeArticleen_US
Appears in Collections:Research Articles (Narayan K. S.)

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