Please use this identifier to cite or link to this item:
Title: Fabrication of Single Si Nanowire Metal-Semiconductor-Metal Device for Photodetection
Authors: Das, Kaustuv
Samanta, Sudeshna
Kumar, Prashant
Narayan, K. S.
Raychaudhuri, Arup Kumar
Keywords: Electrical & Electronic Engineering
Applied Physics
Metal-Semiconductor-Metal (Msm) Device
Silicon Nanowire (Si Nw)
Silicon Nanowires
Issue Date: 2014
Publisher: IEEE-Inst Electrical Electronics Engineers Inc
Citation: Das, K; Samanta, S; Kumar, P; Narayan, KS; Raychaudhuri, AK, Fabrication of Single Si Nanowire Metal-Semiconductor-Metal Device for Photodetection. IEEE Transactions On Electron Devices 2014, 61 (5) 1444-1450,
IEEE Transactions On Electron Devices
Abstract: The photoresponse of a metal-semiconductor-metal (MSM) device using single silicon nanowire (Si NW) (similar to 50-nm diameter) with responsivity approaching 3 A/W and external quantum efficiency similar to 900% at a moderate bias of 1.0 V is reported. The device exhibits a rapid switching of the current when the light of wavelength 405 nm is turned ON/OFF even at zero bias. The dark and illuminated current-voltage characteristics are studied using the MSM device model. The analysis indicates that a dominant contribution to the photoresponse arises from the reduction of the barrier at the contact regions along with photoconductive response in the strand of the Si NW.
Description: Restricted Access
ISSN: 0018-9383
Appears in Collections:Research Articles (Narayan K. S.)

Files in This Item:
File Description SizeFormat 
  Restricted Access
1.29 MBAdobe PDFView/Open Request a copy

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.