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Title: Epitaxial Co metal thin film grown by pulsed laser deposition using oxide target
Authors: Negi, D. S.
Roy, A.
Loukya, B.
Dileep, K.
Shetty, S.
Kumar, N.
Kumar, P. S. Anil
Datta, Ranjan
Keywords: Crystallography
Materials Science
Applied Physics
Laser Epitaxy
Magnetic Materials
Magnetic Semiconductors
Issue Date: 2014
Publisher: Elsevier Science Bv
Citation: Negi, DS; Roy, A; Loukya, B; Dileep, K; Shetty, S; Kumar, N; Kumar, PSA; Datta, R, Epitaxial Co metal thin film grown by pulsed laser deposition using oxide target. Journal of Crystal Growth 2014, 394, 112-115,
Journal of Crystal Growth
Abstract: We report here the growth of epitaxial Co metal thin film on c-plane sapphire by pulsed laser deposition (RD) using Co:ZnO target utilizing the composition inhomogeneity of the corresponding plasma. Two distinct plasma composition regions have been observed using heavily alloyed Co0.6Zn0.4O target. The central and intense region of the plasma grows Co:ZnO film; the extreme tail grows only Co metal with no trace of either ZnO or Co oxide In between the two extremes, mixed phases (Co +Co-oxides +Co:ZnO) were observed. The Co metal thin film grown in this way shows room temperature ferromagnetism with large in plane magnetization similar to 1288 emu cm(-3) and a coerciviLy of similar to 230 Oe with applied field parallel to the film-substrate interface. Carrier density of the film is similar to 10(22) cm(-3). The film is epiLaxial single phase Co metal which is confirmed by both X-ray diffraction and transmission electron microscopy characierizaLions. Planar Hall Effect (PHE) and Magneto Optic Kerr Effect (MOKE) measurements confirm that the film possesses similar attributes of Co metal. The result shows that the epiLaxial Co metal thin film can be grown from its oxides in the PLD. (C) 2014 Elsevier B.V. All rights reserved.
Description: Restricted Access
ISSN: 0022-0248
Appears in Collections:Research Articles (Ranjan Datta)

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