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dc.contributor.authorDileep, K.
dc.contributor.authorDatta, Ranjan
dc.date.accessioned2017-02-21T07:09:04Z-
dc.date.available2017-02-21T07:09:04Z-
dc.date.issued2014
dc.identifier.citationDileep, K; Datta, R, Phase separation and electronic structure of ZnS0.3O0.7 alloy thin film with and without (Ag, Li) co-doping. Journal of Alloys And Compounds 2014, 586, 499-506, http://dx.doi.org/10.1016/j.jallcom.2013.10.082en_US
dc.identifier.citationJournal of Alloys And Compoundsen_US
dc.identifier.citation586en_US
dc.identifier.issn0925-8388
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/2466-
dc.descriptionRestricted Accessen_US
dc.description.abstractZnS0.3O0.7 alloy thin film with and without Ag and Li co-doping are grown by pulsed laser deposition on c-plane sapphire substrate. The films are phase separated in S-rich and S-poor regions. Two and four different phases are observed to form in (Ag, Li)(0.05):Zn0.95S0.3O0.7 and ZnS0.3O0.7 films respectively. Different phases and their relative volume fractions have been identified by electron diffraction pattern. The band gap corresponding to each phase is identified by low loss region of high resolution electron energy loss spectra. Band bowing parameter upon S doping is found to be 4.12 eV which closely match with Wien2k based density functional theory calculation utilizing mBJLDA exchange correlation potential. Oxygen positions have been replaced by sulphur in the lattice as confirmed by S L-3,L-2 electron energy loss near edge absorption spectra. High resolution electron energy loss spectroscopy has been used to collect core level spectra of various dopants in order to identify their locations in the lattice. Experimental Ag M-5,M-4 extended energy loss fine structure and Li K electron energy loss near edge structure in (Ag, Li): ZnS0.3O0.7 alloy have been compared with calculated spectra using FEFF code, suggesting that Ag and Li have taken up both the substitution and interstitial positions in the lattice. All the samples are resistive with resistance in the range of a few mega-ohms. (C) 2013 Elsevier B. V. All rights reserved.en_US
dc.description.uri1873-4669en_US
dc.description.urihttp://dx.doi.org/10.1016/j.jallcom.2013.10.082en_US
dc.language.isoEnglishen_US
dc.publisherElsevier Science Saen_US
dc.rights@Elsevier Science Sa, 2014en_US
dc.subjectPhysical Chemistryen_US
dc.subjectMaterials Scienceen_US
dc.subjectMetallurgy & Metallurgical Engineeringen_US
dc.subjectZno1-Xsx Alloyen_US
dc.subjectElectron Energy Loss Spectroscopyen_US
dc.subjectPhase Separationen_US
dc.subjectPulsed-Laser-Depositionen_US
dc.subjectEnergy-Loss Spectroscopyen_US
dc.subjectOptical-Propertiesen_US
dc.subjectZinc-Oxideen_US
dc.subjectDegrees Ken_US
dc.subjectZnoen_US
dc.subjectSapphireen_US
dc.subjectDopanten_US
dc.subjectModelen_US
dc.titlePhase separation and electronic structure of ZnS0.3O0.7 alloy thin film with and without (Ag, Li) co-dopingen_US
dc.typeArticleen_US
Appears in Collections:Research Articles (Ranjan Datta)

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