Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/2495
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dc.contributor.authorGuin, Satya N.
dc.contributor.authorChatterjee, Arindom
dc.contributor.authorBiswas, Kanishka
dc.date.accessioned2017-02-21T08:58:11Z-
dc.date.available2017-02-21T08:58:11Z-
dc.date.issued2014
dc.identifier.citationGuin, SN; Chatterjee, A; Biswas, K, Enhanced thermoelectric performance in p-type AgSbSe2 by Cd-doping. RSC Advances 2014, 4 (23) 11811-11815, http://dx.doi.org/10.1039/c4ra00969jen_US
dc.identifier.citationRSC Advancesen_US
dc.identifier.citation4en_US
dc.identifier.citation23en_US
dc.identifier.issn2046-2069
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/2495-
dc.descriptionRestricted Accessen_US
dc.description.abstractThermoelectric materials can directly convert waste heat into electrical energy and will play a significant role in future energy management. Herein, we have achieved improved thermoelectric performance in p-type Te-free AgSb1-xCdxSe2 (x = 0.02-0.06) system. Simple doping of Cd2+ in the Sb3+ sublattice increases the carrier concentration, resulting in enhanced electrical conductivity in AgSb1-xCdxSe2 compared to the pristine AgSbSe2. Improved electrical transport and ultra low thermal conductivity give rise to a high thermoelectric figure of merit, ZT, of similar to 1 at similar to 640 K in AgSb0.98Cd0.02Se2, which is similar to the traditional market based expensive and scarce metal tellurides.en_US
dc.description.urihttp://dx.doi.org/10.1039/c4ra00969jen_US
dc.language.isoEnglishen_US
dc.publisherRoyal Society of Chemistryen_US
dc.rights@Royal Society of Chemistry, 2014en_US
dc.subjectChemistryen_US
dc.subjectFigure-Of-Meriten_US
dc.subjectBulk Thermoelectricsen_US
dc.subjectNanostructuresen_US
dc.subjectAgSbTe2en_US
dc.subjectDisorderen_US
dc.subjectAgBiSe2en_US
dc.titleEnhanced thermoelectric performance in p-type AgSbSe2 by Cd-dopingen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Kaniska Biswas)

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