Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/375
Title: Anharmonic self energies of phonons in silicon
Authors: Narasimhan, Shobhana
Vanderbilt, David
Keywords: Raman-Scattering
Temperature-Dependence
Si
Ge
Dynamics
Sn
Issue Date: 15-Feb-1991
Publisher: American Physical Society
Citation: Physical Review B 43(5), 4541-4544 (1991)
Abstract: We have carried out a realistic ab initio calculation of the contribution of cubic anharmonicity to the inverse lifetime GAMMA and the frequency shift DELTA of phonons in silicon. The cubic coupling constants for phonons throughout the Brillouin zone are obtained from an anharmonic Keating-type lattice-dynamical model, which has been fit to a database of results from local-density-approximation frozen-phonon and elastic-modulus calculations. GAMMA and DELTA have been calculated as a function of temperature T and wave vector. Our results agree reasonably well with experiment, but indicate the need for retention of quartic and higher-order terms, especially at high T.
Description: Restricted Access
URI: https://libjncir.jncasr.ac.in/xmlui/10572/375
Other Identifiers: 0163-1829
Appears in Collections:Research Articles (Shobhana Narasimhan)

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