Photophysics of doped Semiconductor quantum dots: A path towards new optoelectronic materials

Abstract

Controlled incorporation of a few impurity atoms/ions, especially transition metal ions into semiconductor quantum dots (QDs) impart many interesting properties that play a major role in making the semiconductor industry more versatile. The effect of doping becomes further pronounced due to the strong quantum confinement effect and high surface-to-volume ratio in QD materials. However, the lack of a few fundamental yet very significant aspects has been the major bottleneck in the development of these materials for practical applications. In this thesis, we studied various singly doped QDs to elucidate the unresolved problems related to their fundamental photo-physics. We also synthetically engineered a few dual-doped QD systems and studied their interesting photo-physics.