Sharvani, S.; Upadhayaya, Kishor; Kumari, Gayatri; Narayana, Chandrabhas; Shivaprasad, S. M.
(IOP Publishing Ltd, 2015)
The GaN nanowall network, formed by opening the screw dislocations by kinetically controlled MBE growth, possesses a large surface and high conductivity. Sharp apexed nanowalls show higher surface electron concentration ...