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Electroluminescence from GaN-polymer heterojunction

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dc.contributor.author Chitara, Basant
dc.contributor.author Lal, Nidhi
dc.contributor.author Krupanidhi, S B
dc.contributor.author Rao, C N R
dc.date.accessioned 2012-11-19T10:36:56Z
dc.date.available 2012-11-19T10:36:56Z
dc.date.issued 2011-12
dc.identifier 0022-2313 en_US
dc.identifier.citation Journal of Luminescence 131(12), 2612-2615 (2011) en_US
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/1004
dc.description Restricted Access en_US
dc.description.abstract Inorganic and organic semiconductor devices are generally viewed as distinct and separate technologies. Herein we report a hybrid inorganic-organic light-emitting device employing the use of an air stable polymer, Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction, avoiding the use of p-type GaN, which is difficult to grow, being prone to the complex and expensive fabrication techniques that characterises it. I-V characteristics of the GaN-polymer heterojunction fabricated by us exhibits excellent rectification. The luminescence onset voltage is typically about 8-10 V. The device emits yellowish white electroluminescence with CIE coordinates (0.42, 0.44). (C) 2011 Elsevier B.V. All rights reserved. en_US
dc.description.uri http://dx.doi.org/10.1016/j.jlumin.2011.04.027 en_US
dc.language.iso en en_US
dc.publisher Elsevier Science BV en_US
dc.rights © 2011 Elsevier Science BV en_US
dc.subject Electroluminescence en_US
dc.subject GaN en_US
dc.subject Inorganic-Organic heterojunction en_US
dc.subject Light-Emitting-Diodes en_US
dc.subject Laser-Diodes en_US
dc.subject Blue en_US
dc.subject Devices en_US
dc.title Electroluminescence from GaN-polymer heterojunction en_US
dc.type Article en_US


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