Preparation and characterization of oriented III-V nitride thin films by nebulized spray pyrolysis

Raju, A R; Sardar, Kripasindhu; Rao, C N R

dc.contributor.author	Raju, A R
dc.contributor.author	Sardar, Kripasindhu
dc.contributor.author	Rao, C N R
dc.date.accessioned	2012-11-22T09:43:30Z
dc.date.available	2012-11-22T09:43:30Z
dc.date.issued	2002-12
dc.identifier	1369-8001	en_US
dc.identifier.citation	Materials Science in Semiconductor Processing 4(6), 549-553 (2002)	en_US
dc.identifier.uri	https://libjncir.jncasr.ac.in/xmlui/10572/1048
dc.description	Restricted Access	en_US
dc.description.abstract	Thin films of GaN, InGaN, AlGaN and AlN on Si(1 0 0) as well as on Al2O3(0 0 0 1) single crystalline substrates have been deposited at 1123, 1023, 1173 and 1173 K, respectively, by employing the simple inexpensive technique of nebulized spray pyrolysis. GaN films deposited on Si are polycrystalline where as the films deposited on Al2O3 are epitaxial. GaN epitaxial films show cathodoluminescence characteristics. Photoluminescence studies show that all the films are of high quality.	en_US
dc.description.uri	http://dx.doi.org/ 10.1016/S1369-8001(02)00015-X	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier Science Ltd	en_US
dc.rights	© 2002 Elsevier Science Ltd	en_US
dc.subject	Thin films	en_US
dc.subject	GaN	en_US
dc.subject	InGaN	en_US
dc.subject	AlGaN	en_US
dc.subject	AlN	en_US
dc.subject	nebulized spray pyrolysis	en_US
dc.subject	cathodoluminescence characteristics	en_US
dc.title	Preparation and characterization of oriented III-V nitride thin films by nebulized spray pyrolysis	en_US
dc.type	Article	en_US