Magnetic, optical and transport properties of GaMnN films

Sardar, K; Raju, A R; Bansal, B; Venkataraman, V; Rao, C N R

dc.contributor.author	Sardar, K
dc.contributor.author	Raju, A R
dc.contributor.author	Bansal, B
dc.contributor.author	Venkataraman, V
dc.contributor.author	Rao, C N R
dc.date.accessioned	2012-11-23T10:09:38Z
dc.date.available	2012-11-23T10:09:38Z
dc.date.issued	2003
dc.identifier	0038-1098	en_US
dc.identifier.citation	Solid State Communications 125(1), 55-57 (2003)	en_US
dc.identifier.uri	https://libjncir.jncasr.ac.in/xmlui/10572/1057
dc.description	Restricted Access	en_US
dc.description.abstract	GaMnN films with 1–3% Mn deposited on Si(100) and Al2O3(0001) substrates, by the technique of nebulized spray pyrolysis by employing acetylacetonate precursors, have been characterized by X-ray diffraction, photoluminescence spectra and other techniques. The films are ferromagnetic and show magnetic hysteresis. The ferromagnetic Tc increases with the Mn content, with the 3% Mn film showing a Tc of ∼250 K. Anomalous Hall effect is observed below Tc where the films exhibit a small negative magnetoresistance.	en_US
dc.description.uri	http://dx.doi.org/ 10.1016/S0038-1098(02)00621-X	en_US
dc.language.iso	en	en_US
dc.publisher	Pergamon-Elsevier Science Ltd	en_US
dc.rights	© 2003 Elsevier Science Ltd	en_US
dc.subject	thin films	en_US
dc.subject	magnetic films and multilayers	en_US
dc.subject	semiconductors	en_US
dc.subject	electronic transport	en_US
dc.subject	luminescence	en_US
dc.subject	Ferromagnetism	en_US
dc.subject	Semiconductor	en_US
dc.subject	Gan	en_US
dc.title	Magnetic, optical and transport properties of GaMnN films	en_US
dc.type	Article	en_US