dc.contributor.author |
Kam, Kinson C
|
|
dc.contributor.author |
Deepak, F L
|
|
dc.contributor.author |
Gundiah, Gautam
|
|
dc.contributor.author |
Rao, C N R
|
|
dc.contributor.author |
Cheetham, A K
|
|
dc.date.accessioned |
2012-11-23T10:38:42Z |
|
dc.date.available |
2012-11-23T10:38:42Z |
|
dc.date.issued |
2004-10 |
|
dc.identifier |
1293-2558 |
en_US |
dc.identifier.citation |
Solid State Sciences 6(10), 1107-1112 (2004) |
en_US |
dc.identifier.uri |
https://libjncir.jncasr.ac.in/xmlui/10572/1059 |
|
dc.description |
Restricted Access |
en_US |
dc.description.abstract |
Various methods have been employed to prepare nanostructured GaN exhibiting reasonable surface areas. The methods include ammonolysis of γ-Ga2O3 or Ga2O3 prepared in the presence of a surfactant, and the reaction of a mixture of Ga2O3 and Ga(acac)3 with NH3. The latter reaction was also carried out in the presence of H3BO3. All the methods yield good GaN samples as characterized by X-ray diffraction, electron microscopy and photoluminescence measurements. Relatively high surface areas were obtained with the GaN samples prepared by the ammonolysis of γ-Ga2O3 (53 m2 g−1), and of Ga2O3 prepared in the presence of a surfactant (66 m2 g−1). GaN obtained by the reaction of NH3 with a mixture of Ga2O3, Ga(acac)3 and boric acid gave a surface area of 59 m2 g−1. GaN nanoparticles prepared by the nitridation of mesoporous Ga2O3 samples generally retain some porosity. |
en_US |
dc.description.uri |
http://dx.doi.org/10.1016/j.solidstatesciences.2004.06.008 |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
Elsevier Science BV |
en_US |
dc.rights |
© 2004 Elsevier SAS |
en_US |
dc.subject |
Inorganic Nanowires |
en_US |
dc.subject |
nanostructured GaN |
en_US |
dc.title |
Properties of nanostructured GaN prepared by different methods |
en_US |
dc.type |
Article |
en_US |