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Properties of nanostructured GaN prepared by different methods

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dc.contributor.author Kam, Kinson C
dc.contributor.author Deepak, F L
dc.contributor.author Gundiah, Gautam
dc.contributor.author Rao, C N R
dc.contributor.author Cheetham, A K
dc.date.accessioned 2012-11-23T10:38:42Z
dc.date.available 2012-11-23T10:38:42Z
dc.date.issued 2004-10
dc.identifier 1293-2558 en_US
dc.identifier.citation Solid State Sciences 6(10), 1107-1112 (2004) en_US
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/1059
dc.description Restricted Access en_US
dc.description.abstract Various methods have been employed to prepare nanostructured GaN exhibiting reasonable surface areas. The methods include ammonolysis of γ-Ga2O3 or Ga2O3 prepared in the presence of a surfactant, and the reaction of a mixture of Ga2O3 and Ga(acac)3 with NH3. The latter reaction was also carried out in the presence of H3BO3. All the methods yield good GaN samples as characterized by X-ray diffraction, electron microscopy and photoluminescence measurements. Relatively high surface areas were obtained with the GaN samples prepared by the ammonolysis of γ-Ga2O3 (53 m2 g−1), and of Ga2O3 prepared in the presence of a surfactant (66 m2 g−1). GaN obtained by the reaction of NH3 with a mixture of Ga2O3, Ga(acac)3 and boric acid gave a surface area of 59 m2 g−1. GaN nanoparticles prepared by the nitridation of mesoporous Ga2O3 samples generally retain some porosity. en_US
dc.description.uri http://dx.doi.org/10.1016/j.solidstatesciences.2004.06.008 en_US
dc.language.iso en en_US
dc.publisher Elsevier Science BV en_US
dc.rights © 2004 Elsevier SAS en_US
dc.subject Inorganic Nanowires en_US
dc.subject nanostructured GaN en_US
dc.title Properties of nanostructured GaN prepared by different methods en_US
dc.type Article en_US


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