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Formation of B, Al, Ga, and Si nitrides from their oxides: a reactive laser ablation study

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dc.contributor.author Raina, G
dc.contributor.author Kulkarni, G U
dc.contributor.author Rao, C N R
dc.date.accessioned 2012-11-23T10:46:12Z
dc.date.available 2012-11-23T10:46:12Z
dc.date.issued 2004-07-02
dc.identifier 0025-5408 en_US
dc.identifier.citation Materials Research Bulletin 39(9), 1271-1277 (2004) en_US
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/1060
dc.description Restricted Access en_US
dc.description.abstract Nitrides such as Si3N4 and GaN are made by the reaction of the respective oxide with N2 or NH3. In order to understand the mechanism of formation of nitrides, reactive laser ablation of B2O3, Al2O3, Ga2O3, and SiO2 in pure form, as well as in mixture with carbon, has been carried out in an atmosphere of nitrogen or ammonia in a pulsed supersonic jet. The reaction of N2 with SiO2 gives nitridic species such as Si2Ny (y≤5) in the vapor phase. On reaction with N2 in the presence of carbon, B2O3 and Ga2O3 yield species of the type BxNy and GaNy, respectively. Nitridic species are preponderant in the reaction with ammonia only in the case of SiO2. Al2O3 predominantly gives oxynitridic species under the reaction conditions examined. en_US
dc.description.uri http://dx.doi.org/10.1016/j.materresbull.2004.04.009 en_US
dc.language.iso en en_US
dc.publisher Pergamon-Elsevier Science Ltd en_US
dc.rights © 2004 Elsevier Ltd en_US
dc.subject electronic materials en_US
dc.subject nitrides en_US
dc.subject oxides en_US
dc.subject laser annealing en_US
dc.subject Infrared-Spectra en_US
dc.subject Carbon Nanotube en_US
dc.subject Nitrogen-Atoms en_US
dc.subject Nanowires en_US
dc.subject Boron en_US
dc.subject Deposition en_US
dc.subject Clusters en_US
dc.subject Nanorods en_US
dc.subject Ammonia en_US
dc.subject Vapor en_US
dc.title Formation of B, Al, Ga, and Si nitrides from their oxides: a reactive laser ablation study en_US
dc.type Article en_US


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