Ferroelectricity in Bi26-xMxO40-δ (M = Al and Ga) with the  γ-Bi2O3 structure

Mangalam, R V K; Ranjith, R; Iyo, A; Sundaresan, A; Krupanidhi, S B; Rao, C N R

dc.contributor.author	Mangalam, R V K
dc.contributor.author	Ranjith, R
dc.contributor.author	Iyo, A
dc.contributor.author	Sundaresan, A
dc.contributor.author	Krupanidhi, S B
dc.contributor.author	Rao, C N R
dc.date.accessioned	2012-11-30T10:56:34Z
dc.date.available	2012-11-30T10:56:34Z
dc.date.issued	2006-10
dc.identifier	0038-1098	en_US
dc.identifier.citation	Solid State Communications 140(1), 42-44 (2006)	en_US
dc.identifier.uri	https://libjncir.jncasr.ac.in/xmlui/10572/1132
dc.description	Restricted Access	en_US
dc.description.abstract	We report on the dielectric properties of bismuth aluminate and gallate with Bi:Al(Ga) ratio of 1:1 and 12:1 prepared at high temperature and ambient pressure. These compounds crystallize in a noncentrosymmetric body-centered cubic structure (space group I23) with a ∼10.18 Å rather than in the perovskite structure. This cubic phase is related to the γ -Bi2O3 structure which has the actual chemical formula Bi3+24 (Bi3+ Bi5+)O40− δ. In the aluminates and gallates studied by us, the Al and Ga ions are distributed over the 24 f and 2a sites. These compounds exhibit ferroelectric hysteresis at room temperature with a weak polarization. c 2006 Elsevier Ltd. All rights reserved.	en_US
dc.description.uri	http://dx.doi.org/10.1016/j.ssc.2006.07.015	en_US
dc.language.iso	en	en_US
dc.publisher	Elsevier Ltd	en_US
dc.rights	© 2006 Elsevier Ltd	en_US
dc.subject	Ferroelectrics	en_US
dc.subject	X-ray scattering	en_US
dc.subject	Dielectric response	en_US
dc.title	Ferroelectricity in Bi26-xMxO40-δ (M = Al and Ga) with the γ-Bi2O3 structure	en_US
dc.type	Article	en_US