Synthesis and optical properties of In-doped GaN nanocrystals

Bhat, S V; Biswas, Kanishka; Rao, C N R

dc.contributor.author	Bhat, S V
dc.contributor.author	Biswas, Kanishka
dc.contributor.author	Rao, C N R
dc.date.accessioned	2012-12-03T10:57:42Z
dc.date.available	2012-12-03T10:57:42Z
dc.date.issued	2007-02
dc.identifier	0038-1098	en_US
dc.identifier.citation	Solid State Communications 141(6), 325-328 (2007)	en_US
dc.identifier.uri	https://libjncir.jncasr.ac.in/xmlui/10572/1189
dc.description	Restricted Access	en_US
dc.description.abstract	Indium-doped GaN nanocrystals with 5% and 10% In have been prepared by a low temperature solvothermal method using hexamethyldisilazane as the nitriding reagent. The nanocrystals show Raman bands at lower frequencies compared to GaN. Photoluminescence spectra of the In-doped GaN nanocrystals exhibit an increase in the FWHM with the decrease in the PL band energy, the band energy itself decreasing with increase in the In content. (C) 2006 Elsevier Ltd. All rights reserved.	en_US
dc.description.uri	http://dx.doi.org/10.1016/j.ssc.2006.11.013	en_US
dc.language.iso	en	en_US
dc.publisher	Pergamon-Elsevier Science Ltd	en_US
dc.rights	© 2007 Elsevier Ltd	en_US
dc.subject	nanostructures	en_US
dc.subject	chemical synthesis	en_US
dc.subject	optical properties	en_US
dc.subject	Chemical-Vapor-Deposition	en_US
dc.subject	Ingan Thin-Films	en_US
dc.subject	Quantum Dots	en_US
dc.subject	Raman-Scattering	en_US
dc.subject	Photoluminescence	en_US
dc.subject	Layers	en_US
dc.subject	Emitters	en_US
dc.title	Synthesis and optical properties of In-doped GaN nanocrystals	en_US
dc.type	Article	en_US