dc.contributor.author |
Rao, G R
|
|
dc.contributor.author |
Rao, C N R
|
|
dc.date.accessioned |
2012-12-07T06:49:44Z |
|
dc.date.available |
2012-12-07T06:49:44Z |
|
dc.date.issued |
1990-08 |
|
dc.identifier |
0169-4332 |
en_US |
dc.identifier.citation |
Applied Surface Science 45(1), 65-69 (1990) |
en_US |
dc.identifier.uri |
https://libjncir.jncasr.ac.in/xmlui/10572/1260 |
|
dc.description |
Restricted Access |
en_US |
dc.description.abstract |
N2 chemisorbs on (100), (110) and (111) single-crystal faces at 80 K without any dissociation. A molecular precursor species at the threshold of dissociation is formed at 80 K on a Ni(110) surface covered with atomic carbon or nitrogen; the precursor species dissociates at higher temperatures. At low C concentrations, however, dissociative adsorption occurs on Ni(110) at 80 K without forming any precursor species, accompanied by molecular chemisorption on the open Ni sites. |
en_US |
dc.description.uri |
http://dx.doi.org/10.1016/0169-4332(90)90021-Q |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
Elsevier Science BV |
en_US |
dc.rights |
© 1990 Elsevier Science Publishers BV |
en_US |
dc.subject |
nitrogen |
en_US |
dc.subject |
single-crystal Ni surfaces |
en_US |
dc.subject |
dissociation |
en_US |
dc.subject |
molecular chemisorption |
en_US |
dc.title |
Adsorption of nitrogen on clean and modified single-crystal Ni surfaces |
en_US |
dc.type |
Article |
en_US |