Browsing International Centre for Materials Science (ICMS) by Author "Bhasker, H. P."

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Polarization induced two dimensional confinement of carriers in wedge shaped polar semiconductors

Deb, S.; Bhasker, H. P.; Thakur, Varun; Shivaprasad, S. M.; Dhar, S. (Nature Publishing Group, 2016)

A novel route to achieve two dimensional (2D) carrier confinement in a wedge shaped wall structure made of a polar semiconductor has been demonstrated theoretically. Tapering of the wall along the direction of the spontaneous ...
Quantum coherence of electrons in random networks of c-axis oriented wedge-shaped GaN nanowalls grown by molecular beam epitaxy

Bhasker, H. P.; Thakur, Varun; Shivaprasad, S. M.; Dhar, S. (IOP Publishing Ltd, 2015)

The depth distribution of the transport properties as well as the temperature dependence of the low field magneto-conductance for c-axis oriented GaN nanowall network samples grown with different average wall-widths (t(av)) ...
Role of quantum confinement in giving rise to high electron mobility in GaN nanowall networks

Bhasker, H. P.; Thakur, Varun; Shivaprasad, S. M.; Dhar, S. (Pergamon-Elsevier Science Ltd, 2015)

Origin of unprecedentedly high electron mobility observed in the c-axis oriented GaN nanowall networks is investigated by studying the depth distribution of structural, electrical and optical properties of several such ...

Now showing items 1-3 of 3

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