Kaniska Biswas: Recent submissions

Now showing items 21-29 of 29

High performance thermoelectric materials and devices based on GeTe

Perumal, Suresh; Roychowdhury, Subhajit; Biswas, Kanishka (Royal Society of Chemistry, 2016)

Thermoelectric materials have received recent attention due to their ability to convert waste heat to electrical energy directly and reversibly. Inorganic materials, especially Bi2Te3, PbTe and Si-Ge based alloys, have ...
Low frequency noise and photo-enhanced field emission from ultrathin PbBi2Se4 nanosheets

Suryawanshi, Sachin R.; Guin, Satya N.; Chatterjee, Arindom; Kashid, Vikas; More, Mahendra A.; Late, Dattatray J.; Biswas, Kanishka (Royal Society of Chemistry, 2016)

Atomically thin two-dimensional layered materials have gained wide interest owing to their novel properties and potential for applications in nanoelectronic and optoelectronic devices. Here, we present the spectral analysis ...
Few-Layer Nanosheets of n-Type SnSe2

Saha, Sujoy; Banik, Ananya; Biswas, Kanishka (Wiley-V C H Verlag Gmbh, 2016)

Layered p-block metal chalcogenides are renowned for thermoelectric energy conversion due to their low thermal conductivity caused by bonding asymmetry and anharmonicity. Recently, single crystalline layered SnSe has created ...
AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization

Banik, Ananya; Biswas, Kanishka (Academic Press Inc Elsevier Science, 2016)

SnTe, a Pb-free analogue of PbTe, was earlier assumed to be a poor thermoelectric material due to excess p-type carrier concentration and large energy separation between light and heavy hole valence bands. Here, we report ...
Sb deficiencies control hole transport and boost the thermoelectric performance of p-type AgSbSe2

Guin, Satya N.; Biswas, Kanishka (Royal Society of Chemistry, 2015)

Silver antimony selenide, AgSbSe2, a Te free analogue of AgSbTe2, has been known to show a promising thermoelectric performance when it is doped with monovalent (M+) and divalent (M2+) cations in the Sb sublattice. Here, ...
Solution-Based Synthesis of Layered Intergrowth Compounds of the Homologous PbmBi2nTe3n+m Series as Nanosheets

Chatterjee, Arindom; Biswas, Kanishka (Wiley-V C H Verlag Gmbh, 2015)

Layered intergrowth compounds in the homologous PbmBi2nTe3n+m family are interesting because they are examples of natural heterostructures. We present a simple solution-based synthesis of two-dimensional nanosheets of ...
Promising thermoelectric performance in n-type AgBiSe2: effect of aliovalent anion doping

Guin, Satya N.; Srihari, Velaga; Biswas, Kanishka (Royal Society of Chemistry, 2015)

Thermoelectric materials can convert untapped heat to electrical energy, and thus, it will have a significant role in future energy management. Recent industrial applications demand efficient thermoelectric materials which ...
Temperature driven p-n-p type conduction switching materials: current trends and future directions

Guin, Satya N.; Biswas, Kanishka (Royal Society of Chemistry, 2015)

Modern technological inventions have been going through a "renaissance'' period. Development of new materials and understanding of fundamental structure-property correlations are the important steps to move further for ...
Electronic grade and flexible semiconductor film employing oriented attachment of colloidal ligand-free PbS and PbSe nanocrystals at room temperature

Shanker, G. Shiva; Swarnkar, Abhishek; Chatterjee, Arindom; Chakraborty, S.; Phukan, Manabjyoti; Parveen, Naziya; Biswas, Kanishka; Nag, Angshuman (Royal Society of Chemistry, 2015)

Electronic grade semiconductor films have been obtained via the sintering of solution processed PbS and PbSe nanocrystals at room temperature. Prior attempts to achieve similar films required the sintering of nanocrystals ...

Now showing items 21-29 of 29

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