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Modulation of Electronic and Self-Assembly Properties of a Donor-Acceptor-Donor-Based Molecular Materials via Atomistic Approach

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dc.contributor.author Dhar, Joydeep
dc.contributor.author Swathi, K.
dc.contributor.author Karothu, Durga Prasad
dc.contributor.author Narayan, K. S.
dc.contributor.author Patil, Satish
dc.date.accessioned 2016-10-28T05:58:42Z
dc.date.available 2016-10-28T05:58:42Z
dc.date.issued 2015
dc.identifier.citation ACS Applied Materials & Interfaces en_US
dc.identifier.citation 7 en_US
dc.identifier.citation 1 en_US
dc.identifier.citation Dhar, J.; Swathi, K.; Karothu, D. P.; Narayan, K. S.; Patil, S., Modulation of Electronic and Self-Assembly Properties of a Donor-Acceptor-Donor-Based Molecular Materials via Atomistic Approach. ACS Applied Materials & Interfaces 2015, 7 (1), 670-681. en_US
dc.identifier.issn 1944-8244
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/1894
dc.description Restricted access en_US
dc.description.abstract The performance of molecular materials in optoelectronic devices critically depends upon their electronic properties and solid-state structure. In this report, we have synthesized sulfur and selenium based (T4BT and T4BSe) donor-acceptor-donor (D-A-D) organic derivatives in order to understand the structure-property correlation in organic semiconductors by selectively tuning the chalcogen atom. The photophysical properties exhibit a significant alteration upon varying a single atom in the molecular structure. A joint theoretical and experimental investigation suggests that replacing sulfur with selenium significantly reduces the band gap and molar absorption coefficient because of lower electronegativity and ionization potential of selenium. Single-crystal X-ray diffraction analysis showed differences in their solid-state packing and intermolecular interactions. Subsequently, difference in the solid-state packing results variation in self-assembly. Micorstructural changes within these materials are correlated to their electrical resistance variation, investigated by conducting probe atomic force microscopy (CP-AFM) measurements. These results provide useful guidelines to understand the fundamental properties of D-A-D materials prepared by atomistic modulation. en_US
dc.description.uri http://dx.doi.org/10.1021/am506905b en_US
dc.language.iso English en_US
dc.publisher American Chemical Society en_US
dc.rights ?American Chemical Society, 2015 en_US
dc.subject Nanoscience & Nanotechnology en_US
dc.subject Materials Science en_US
dc.subject selenium en_US
dc.subject electronic property en_US
dc.subject self-assembly en_US
dc.subject microstructure en_US
dc.subject conductivity en_US
dc.subject Field-Effect Transistors en_US
dc.subject Heterojunction Solar-Cells en_US
dc.subject Conjugated Polymers en_US
dc.subject High-Performance en_US
dc.subject Charge-Transport en_US
dc.subject High Hole en_US
dc.subject Selenophene en_US
dc.subject Ambipolar en_US
dc.subject Copolymer en_US
dc.subject Semiconductors en_US
dc.title Modulation of Electronic and Self-Assembly Properties of a Donor-Acceptor-Donor-Based Molecular Materials via Atomistic Approach en_US
dc.type Article en_US


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