dc.contributor.author |
Guin, Satya N.
|
|
dc.contributor.author |
Srihari, Velaga
|
|
dc.contributor.author |
Biswas, Kanishka
|
|
dc.date.accessioned |
2017-01-04T09:09:41Z |
|
dc.date.available |
2017-01-04T09:09:41Z |
|
dc.date.issued |
2015 |
|
dc.identifier.citation |
Journal of Materials Chemistry A |
en_US |
dc.identifier.citation |
3 |
en_US |
dc.identifier.citation |
2 |
en_US |
dc.identifier.citation |
Guin, S. N.; Srihari, V.; Biswas, K., Promising thermoelectric performance in n-type AgBiSe2: effect of aliovalent anion doping. Journal of Materials Chemistry A 2015, 3 (2), 648-655. |
en_US |
dc.identifier.issn |
2050-7488 |
|
dc.identifier.uri |
https://libjncir.jncasr.ac.in/xmlui/10572/2017 |
|
dc.description |
Restricted access |
en_US |
dc.description.abstract |
Thermoelectric materials can convert untapped heat to electrical energy, and thus, it will have a significant role in future energy management. Recent industrial applications demand efficient thermoelectric materials which are made of non-toxic and inexpensive materials. Here, we report promising thermoelectric performance in halogen (Cl/Br/I) doped n-type bulk AgBiSe2, which is a Pb-free material and consists of earth abundant elements. Aliovalent halide ion doping (2-4 mol%) in the Se2- sublattice of AgBiSe2 significantly increases the n-type carrier concentration in AgBiSe2, thus improving the temperature dependent electronic transport properties. Temperature dependent cation order-disorder transition tailors the electronic transport properties in AgBiSe1.98X0.02 (X = Cl, Br and I) samples. Bond anharmonicity and disordered cation sublattice effectively scatter heat carrying phonon in the high temperature cubic phase of AgBiSe1.98X0.02 (X = Cl, Br and I), which limits the lattice thermal conductivity to a low value of similar to 0.27 W m(-1) K-1 at 810 K. The highest thermoelectric figure of merit, ZT, value of similar to 0.9 at similar to 810 K has been achieved for the AgBiSe1.98Cl0.02 sample, which is promising among the n-type metal selenide based thermoelectric materials. |
en_US |
dc.description.uri |
2050-7496 |
en_US |
dc.description.uri |
http://dx.doi.org/10.1039/c4ta04912h |
en_US |
dc.language.iso |
English |
en_US |
dc.publisher |
Royal Society of Chemistry |
en_US |
dc.rights |
?Royal Society of Chemistry, 2015 |
en_US |
dc.subject |
Physical Chemistry |
en_US |
dc.subject |
Energy & Fuels |
en_US |
dc.subject |
Materials Science |
en_US |
dc.subject |
Thermal-Conductivity |
en_US |
dc.subject |
Bulk Thermoelectrics |
en_US |
dc.subject |
Figure |
en_US |
dc.subject |
Merit |
en_US |
dc.subject |
Nanostructures |
en_US |
dc.subject |
Convergence |
en_US |
dc.subject |
Electron |
en_US |
dc.subject |
PbTe |
en_US |
dc.title |
Promising thermoelectric performance in n-type AgBiSe2: effect of aliovalent anion doping |
en_US |
dc.type |
Article |
en_US |