Image pixel device using integrated organic electronic components

Abstract

We report a solution processed, monolithically integrated device similar to an imaging pixel element used in complementary metal-oxide semiconductor (CMOS) based cameras. This integrated pixel essentially consists of a pair of organic photodiode (OPD) and organic field effect transistor (OFET). The signal generated by the light responsive OPD drives the OFET to different output states to quantify the light intensity. The prerequisite of a low operating voltage OFET (<2 V) was achieved using a bottom-gate, top-contact OFET consisting of a high mobility polymer semiconductor and a self-assembled hybrid dielectric layer. A bulk heterojunction blend was used as the photo-active layer in the OPD along with suitable buffer layers for charge extraction. The material parameters were optimized to realize a suitable structure which clearly demonstrated the interplay of the OPD and OFET operations, thereby forming a roadmap for all-organic CMOS arrays. Published by AIP Publishing.