dc.contributor.author |
Sahu, Rajib
|
|
dc.contributor.author |
Gholap, Hari Bhau
|
|
dc.contributor.author |
Mounika, Gandi
|
|
dc.contributor.author |
Dileep, Krishnan
|
|
dc.contributor.author |
Vishal, Badri
|
|
dc.contributor.author |
Ghara, Somnath
|
|
dc.contributor.author |
Datta, Ranjan
|
|
dc.date.accessioned |
2017-01-24T06:28:26Z |
|
dc.date.available |
2017-01-24T06:28:26Z |
|
dc.date.issued |
2016 |
|
dc.identifier.citation |
Sahu, R.; Gholap, H. B.; Mounika, G.; Dileep, K.; Vishal, B.; Ghara, S.; Datta, R., Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film. Physica Status Solidi B-Basic Solid State Physics 2016, 253 (3), 504-508 http://dx.doi.org/10.1002/pssb.201552625 |
en_US |
dc.identifier.citation |
Physica Status Solidi B-Basic Solid State Physics |
en_US |
dc.identifier.citation |
253 |
en_US |
dc.identifier.citation |
3 |
en_US |
dc.identifier.issn |
0370-1972 |
|
dc.identifier.uri |
https://libjncir.jncasr.ac.in/xmlui/10572/2172 |
|
dc.description |
Restricted Access |
en_US |
dc.description.abstract |
We report on the observation of stable p-type conductivity in B and N co-doped epitaxial ZnO thin films grown by pulsed laser deposition. Films grown at higher oxygen partial pressure (similar to 10(-1) Torr) shows p-type conductivity with a carrier concentration of similar to 3 x 10(16) cm(-3). This p-type conductivity is associated with the significant decrease in defect emission peaks due to the vacancy oxygen (V-O) and Schottky type-I native defects compared to films grown at low oxygen partial pressure (similar to 10(-5) Torr). The p-type conductivity is explained with the help of density functional theory (DFT) calculation considering off-stoichiometric BN1+x in the ZnO lattice. (C) 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim |
en_US |
dc.description.uri |
1521-3951 |
en_US |
dc.description.uri |
http://dx.doi.org/10.1002/pssb.201552625 |
en_US |
dc.language.iso |
English |
en_US |
dc.publisher |
Wiley-V C H Verlag Gmbh |
en_US |
dc.rights |
@Wiley-V C H Verlag Gmbh, 2016 |
en_US |
dc.subject |
Physics |
en_US |
dc.subject |
ZnO |
en_US |
dc.subject |
thins films |
en_US |
dc.subject |
doping |
en_US |
dc.subject |
p-type conductivity |
en_US |
dc.subject |
density functional theory |
en_US |
dc.subject |
pulsed laser deposition |
en_US |
dc.subject |
Pulsed-Laser Deposition |
en_US |
dc.subject |
Electronic-Structure |
en_US |
dc.subject |
Phase-Separation |
en_US |
dc.subject |
Zinc-Oxide |
en_US |
dc.subject |
Photoluminescence |
en_US |
dc.subject |
Semiconductors |
en_US |
dc.subject |
Gap |
en_US |
dc.title |
Stable p-type conductivity in B and N co-doped ZnO epitaxial thin film |
en_US |
dc.type |
Article |
en_US |