DSpace Repository

AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization

Show simple item record

dc.contributor.author Banik, Ananya
dc.contributor.author Biswas, Kanishka
dc.date.accessioned 2017-01-24T06:36:52Z
dc.date.available 2017-01-24T06:36:52Z
dc.date.issued 2016
dc.identifier.citation Banik, A.; Biswas, K., AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization. Journal of Solid State Chemistry 2016, 242, 43-49 http://dx.doi.org/10.1016/j.jssc.2016.02.012 en_US
dc.identifier.citation Journal of Solid State Chemistry en_US
dc.identifier.citation 242 en_US
dc.identifier.issn 0022-4596
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/2206
dc.description Restricted Access en_US
dc.description.abstract SnTe, a Pb-free analogue of PbTe, was earlier assumed to be a poor thermoelectric material due to excess p-type carrier concentration and large energy separation between light and heavy hole valence bands. Here, we report the enhancement of the thermoelectric performance of p-type SnTe by Ag and I co-doping. AgI (1-6 mol%) alloying in SnTe modulates its electronic structure by increasing the band gap of SnTe, which results in decrease in the energy separation between its light and heavy hole valence bands, thereby giving rise to valence band convergence. Additionally, iodine doping in the Te sublattice of SnTe decreases the excess p-type carrier concentration. Due to significant decrease in hole concentration and reduction of the energy separation between light and heavy hole valence bands, significant enhancement in Seebeck coefficient was achieved at the temperature range of 600-900 K for Sn1-xAgxTe1-xIx samples. A maximum thermoelectric figure of merit, zT, of similar to 1.05 was achieved at 860 K in high quality crystalline ingot of p-type Sn0.95Ag0.05Te0.95I0.05. (C) 2016 Elsevier Inc. All rights reserved. en_US
dc.description.uri 1095-726X en_US
dc.description.uri http://dx.doi.org/10.1016/j.jssc.2016.02.012 en_US
dc.language.iso English en_US
dc.publisher Academic Press Inc Elsevier Science en_US
dc.rights @Academic Press Inc Elsevier Science, 2016 en_US
dc.subject Chemistry en_US
dc.subject Thermoelectrics en_US
dc.subject Tin telluride en_US
dc.subject Seebeck coefficient en_US
dc.subject Band convergence en_US
dc.subject Carrier optimization en_US
dc.subject Thermal-Conductivity en_US
dc.subject Bulk Thermoelectrics en_US
dc.subject High-Figure en_US
dc.subject Merit en_US
dc.subject Nanostructures en_US
dc.subject Snse en_US
dc.subject Skutterudites en_US
dc.subject Efficiency en_US
dc.subject Power en_US
dc.subject Mnte en_US
dc.title AgI alloying in SnTe boosts the thermoelectric performance via simultaneous valence band convergence and carrier concentration optimization en_US
dc.type Article; Proceedings Paper en_US


Files in this item

This item appears in the following Collection(s)

Show simple item record

Search DSpace


Advanced Search

Browse

My Account