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The origin of low thermal conductivity in Sn1-xSbxTe: phonon scattering via layered intergrowth nanostructures

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dc.contributor.author Banik, Ananya
dc.contributor.author Vishal, Badri
dc.contributor.author Perumal, Suresh
dc.contributor.author Datta, Ranjan
dc.contributor.author Biswas, Kanishka
dc.date.accessioned 2017-01-24T06:36:53Z
dc.date.available 2017-01-24T06:36:53Z
dc.date.issued 2016
dc.identifier.citation Banik, A.; Vishal, B.; Perumal, S.; Datta, R.; Biswas, K., The origin of low thermal conductivity in Sn1-xSbxTe: phonon scattering via layered intergrowth nanostructures. Energy & Environmental Science 2016, 9 (6), 2011-2019 http://dx.doi.org/10.1039/c6ee00728g en_US
dc.identifier.citation Energy & Environmental Science en_US
dc.identifier.citation 9 en_US
dc.identifier.citation 6 en_US
dc.identifier.issn 1754-5692
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/2217
dc.description Restricted Access en_US
dc.description.abstract Inorganic solids with low thermal conductivity are of great interest for thermoelectric applications. The formation of synthetic nanostructures by matrix encapsulation is one of the important strategies for thermal conductivity reduction through phonon scattering. Here, we report the reduction of lattice thermal conductivity near the theoretical minimum limit, kappa(min), in SnTe via spontaneous formation of nanodomains of the Sb-rich layered intergrowth SnmSb2nTe3n+m compounds, which are natural heterostructures. High-resolution transmission electron microscopy of Sn1-xSbxTe samples reveals the formation of endotaxial Sb rich nanoprecipitates (2-10 nm) along with super-structured intergrowth nanodomains (10-30 nm), which are the key features responsible for the significant reduction of lattice thermal conductivity in SnTe. This mechanism suggests a new avenue for the nanoscale engineering in SnTe to achieve low lattice thermal conductivities. Moreover, the presence of Sb improves the electronic transport properties by aliovalent cation doping which optimizes the hole concentration in SnTe. As a result, an enhanced thermoelectric figure of merit, zT, of similar to 1 has been achieved for the composition of Sn0.85Sb0.15Te at 800 K. The high zT sample exhibits the Vickers microhardness value of similar to 136 H-V which is double that of pristine SnTe and is significantly higher than those of the present state-of-the-art thermoelectric materials. en_US
dc.description.uri 1754-5706 en_US
dc.description.uri http://dx.doi.org/10.1039/c6ee00728g en_US
dc.language.iso English en_US
dc.publisher Royal Society of Chemistry en_US
dc.rights @Royal Society of Chemistry, 2016 en_US
dc.subject Chemistry en_US
dc.subject Energy & Fuels en_US
dc.subject Engineering en_US
dc.subject Environmental Sciences & Ecology en_US
dc.subject High-Thermoelectric Performance en_US
dc.subject Density-Of-States en_US
dc.subject Bulk Thermoelectrics en_US
dc.subject Transport-Properties en_US
dc.subject Band Convergence en_US
dc.subject Solid-Solutions en_US
dc.subject Snte en_US
dc.subject Figure en_US
dc.subject Merit en_US
dc.subject Alloys en_US
dc.title The origin of low thermal conductivity in Sn1-xSbxTe: phonon scattering via layered intergrowth nanostructures en_US
dc.type Article en_US


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