dc.contributor.author |
Bera, Achintya
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dc.contributor.author |
Pal, Koushik
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|
dc.contributor.author |
Muthu, D. V. S.
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|
dc.contributor.author |
Waghmare, U. V.
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|
dc.contributor.author |
Sood, A. K.
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dc.date.accessioned |
2017-01-24T06:50:13Z |
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dc.date.available |
2017-01-24T06:50:13Z |
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dc.date.issued |
2016 |
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dc.identifier.citation |
Bera, A.; Pal, K.; Muthu, D. V. S.; Waghmare, U. V.; Sood, A. K., Pressure-induced phase transition in Bi2Se3 at 3 GPa: electronic topological transition or not? Journal of Physics-Condensed Matter 2016, 28 (10), 8 http://dx.doi.org/10.1088/0953-8984/28/10/105401 |
en_US |
dc.identifier.citation |
Journal of Physics-Condensed Matter |
en_US |
dc.identifier.citation |
28 |
en_US |
dc.identifier.citation |
10 |
en_US |
dc.identifier.issn |
0953-8984 |
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dc.identifier.uri |
https://libjncir.jncasr.ac.in/xmlui/10572/2274 |
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dc.description |
Restricted Access |
en_US |
dc.description.abstract |
In recent years, a low pressure transition around P similar to 3 GPa exhibited by the A(2)B(3)-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi2Se3) using Raman spectroscopy at pressure up to 26.2 GPa. We see clear Raman signatures of an isostructural phase transition at P similar to 2.4 GPa followed by structural transitions at similar to 10 GPa and 16 GPa. First-principles calculations reveal anomalously sharp changes in the structural parameters like the internal angle of the rhombohedral unit cell with a minimum in the c/a ratio near P similar to 3 GPa. While our calculations reveal the associated anomalies in vibrational frequencies and electronic bandgap, the calculated Z(2) invariant and Dirac conical surface electronic structure remain unchanged, showing that there is no change in the electronic topology at the lowest pressure transition. |
en_US |
dc.description.uri |
1361-648X |
en_US |
dc.description.uri |
http://dx.doi.org/10.1088/0953-8984/28/10/105401 |
en_US |
dc.language.iso |
English |
en_US |
dc.publisher |
IoP Publishing Ltd |
en_US |
dc.rights |
@IoP Publishing Ltd, 2016 |
en_US |
dc.subject |
Physics |
en_US |
dc.subject |
Raman |
en_US |
dc.subject |
high pressure |
en_US |
dc.subject |
topological insulator |
en_US |
dc.subject |
electronic topological transition |
en_US |
dc.subject |
Lifshitz transition |
en_US |
dc.subject |
Generalized Gradient Approximation |
en_US |
dc.subject |
Insulator Bi2Se3 |
en_US |
dc.subject |
Bismuth Selenide |
en_US |
dc.subject |
Surface |
en_US |
dc.subject |
Bi2Te3 |
en_US |
dc.subject |
Sb2Te3 |
en_US |
dc.subject |
Superconductor |
en_US |
dc.subject |
Phonons |
en_US |
dc.subject |
States |
en_US |
dc.subject |
Raman |
en_US |
dc.title |
Pressure-induced phase transition in Bi2Se3 at 3 GPa: electronic topological transition or not? |
en_US |
dc.type |
Article |
en_US |