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Pressure-induced phase transition in Bi2Se3 at 3 GPa: electronic topological transition or not?

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dc.contributor.author Bera, Achintya
dc.contributor.author Pal, Koushik
dc.contributor.author Muthu, D. V. S.
dc.contributor.author Waghmare, U. V.
dc.contributor.author Sood, A. K.
dc.date.accessioned 2017-01-24T06:50:13Z
dc.date.available 2017-01-24T06:50:13Z
dc.date.issued 2016
dc.identifier.citation Bera, A.; Pal, K.; Muthu, D. V. S.; Waghmare, U. V.; Sood, A. K., Pressure-induced phase transition in Bi2Se3 at 3 GPa: electronic topological transition or not? Journal of Physics-Condensed Matter 2016, 28 (10), 8 http://dx.doi.org/10.1088/0953-8984/28/10/105401 en_US
dc.identifier.citation Journal of Physics-Condensed Matter en_US
dc.identifier.citation 28 en_US
dc.identifier.citation 10 en_US
dc.identifier.issn 0953-8984
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/2274
dc.description Restricted Access en_US
dc.description.abstract In recent years, a low pressure transition around P similar to 3 GPa exhibited by the A(2)B(3)-type 3D topological insulators is attributed to an electronic topological transition (ETT) for which there is no direct evidence either from theory or experiments. We address this phase transition and other transitions at higher pressure in bismuth selenide (Bi2Se3) using Raman spectroscopy at pressure up to 26.2 GPa. We see clear Raman signatures of an isostructural phase transition at P similar to 2.4 GPa followed by structural transitions at similar to 10 GPa and 16 GPa. First-principles calculations reveal anomalously sharp changes in the structural parameters like the internal angle of the rhombohedral unit cell with a minimum in the c/a ratio near P similar to 3 GPa. While our calculations reveal the associated anomalies in vibrational frequencies and electronic bandgap, the calculated Z(2) invariant and Dirac conical surface electronic structure remain unchanged, showing that there is no change in the electronic topology at the lowest pressure transition. en_US
dc.description.uri 1361-648X en_US
dc.description.uri http://dx.doi.org/10.1088/0953-8984/28/10/105401 en_US
dc.language.iso English en_US
dc.publisher IoP Publishing Ltd en_US
dc.rights @IoP Publishing Ltd, 2016 en_US
dc.subject Physics en_US
dc.subject Raman en_US
dc.subject high pressure en_US
dc.subject topological insulator en_US
dc.subject electronic topological transition en_US
dc.subject Lifshitz transition en_US
dc.subject Generalized Gradient Approximation en_US
dc.subject Insulator Bi2Se3 en_US
dc.subject Bismuth Selenide en_US
dc.subject Surface en_US
dc.subject Bi2Te3 en_US
dc.subject Sb2Te3 en_US
dc.subject Superconductor en_US
dc.subject Phonons en_US
dc.subject States en_US
dc.subject Raman en_US
dc.title Pressure-induced phase transition in Bi2Se3 at 3 GPa: electronic topological transition or not? en_US
dc.type Article en_US


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