dc.contributor.author |
Biswas, Kanishka
|
|
dc.contributor.author |
Sardar, Kripasindhu
|
|
dc.contributor.author |
Rao, C N R
|
|
dc.date.accessioned |
2012-01-23T06:25:54Z |
|
dc.date.available |
2012-01-23T06:25:54Z |
|
dc.date.issued |
2006-08-25 |
|
dc.identifier |
0003-6951 |
en_US |
dc.identifier.citation |
Applied Physics Letters 89(13), 132503 (2006) |
en_US |
dc.identifier.uri |
https://libjncir.jncasr.ac.in/xmlui/10572/233 |
|
dc.description.abstract |
3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4-18 nm, have been prepared by two independent routes under solvothermal conditions starting with two different precursors. The reaction temperature was around 350 degrees C in all the preparations. The nanocrystals so prepared exhibit ferromagnetism with magnetization (M) and Curie temperature (T-C) values increasing with percent of Mn and particle size. The observation of ferromagnetism in Mn-doped GaN nanocrystals prepared at relatively low temperatures is of significance in understanding this potential in spintronics materials. (c) 2006 American Institute of Physics. |
en_US |
dc.description.uri |
http://dx.doi.org/10.1063/1.2357927 |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
American Institute of Physics |
en_US |
dc.rights |
© 2006 American Institute of Physics |
en_US |
dc.subject |
Molecular-Beam-Epitaxy |
en_US |
dc.subject |
Semiconductors |
en_US |
dc.subject |
(Ga,Mn)N |
en_US |
dc.subject |
Origin |
en_US |
dc.subject |
Films |
en_US |
dc.title |
Ferromagnetism in Mn-doped GaN nanocrystals prepared solvothermally at low temperatures |
en_US |
dc.type |
Article |
en_US |