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Ferromagnetism in Mn-doped GaN nanocrystals prepared solvothermally at low temperatures

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dc.contributor.author Biswas, Kanishka
dc.contributor.author Sardar, Kripasindhu
dc.contributor.author Rao, C N R
dc.date.accessioned 2012-01-23T06:25:54Z
dc.date.available 2012-01-23T06:25:54Z
dc.date.issued 2006-08-25
dc.identifier 0003-6951 en_US
dc.identifier.citation Applied Physics Letters 89(13), 132503 (2006) en_US
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/233
dc.description.abstract 3% and 5% Mn-doped GaN nanocrystals of different sizes, with the average diameters in the range of 4-18 nm, have been prepared by two independent routes under solvothermal conditions starting with two different precursors. The reaction temperature was around 350 degrees C in all the preparations. The nanocrystals so prepared exhibit ferromagnetism with magnetization (M) and Curie temperature (T-C) values increasing with percent of Mn and particle size. The observation of ferromagnetism in Mn-doped GaN nanocrystals prepared at relatively low temperatures is of significance in understanding this potential in spintronics materials. (c) 2006 American Institute of Physics. en_US
dc.description.uri http://dx.doi.org/10.1063/1.2357927 en_US
dc.language.iso en en_US
dc.publisher American Institute of Physics en_US
dc.rights © 2006 American Institute of Physics en_US
dc.subject Molecular-Beam-Epitaxy en_US
dc.subject Semiconductors en_US
dc.subject (Ga,Mn)N en_US
dc.subject Origin en_US
dc.subject Films en_US
dc.title Ferromagnetism in Mn-doped GaN nanocrystals prepared solvothermally at low temperatures en_US
dc.type Article en_US


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