Synthesis and Characterization of Few-layer Nanosheets of GaN and Other Metal Nitrides

Abstract

By making use of the fact that single- and few-layer nanosheets of GaS and GaSe are readily obtained by micromechanical cleavage because of their mica-like morphology, we were able to prepare GaN nanosheets by the reaction of these chalcogenide nanosheets with ammonia at 600-650 degrees C. The nitride nanosheets were characterized by transmission electron microscopy, atomic force microscopy, and other methods. Few-layer VN was obtained by high-temperature ammonolysis of exfoliated V2O5 sheets. Ammonolysis of MoO3 and MoS2 nanosheets yields the nitride nanosheets.