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Metal-organic molecular device for non-volatile memory storage

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dc.contributor.author Radha, B.
dc.contributor.author Sagade, Abhay A.
dc.contributor.author Kulkarni, G. U.
dc.date.accessioned 2017-02-21T06:59:33Z
dc.date.available 2017-02-21T06:59:33Z
dc.date.issued 2014
dc.identifier.citation Radha, B; Sagade, AA; Kulkarni, GU, Metal-organic molecular device for non-volatile memory storage. Applied Physics Letters 2014, 105 (8), 83103 http://dx.doi.org/10.1063/1.4893755 en_US
dc.identifier.citation Applied Physics Letters en_US
dc.identifier.citation 105 en_US
dc.identifier.citation 8 en_US
dc.identifier.issn 0003-6951
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/2376
dc.description Restricted Access en_US
dc.description.abstract Non-volatile memory devices have been of immense research interest for their use in active memory storage in powered off-state of electronic chips. In literature, various molecules and metal compounds have been investigated in this regard. Molecular memory devices are particularly attractive as they offer the ease of storing multiple memory states in a unique way and also represent ubiquitous choice for miniaturized devices. However, molecules are fragile and thus the device breakdown at nominal voltages during repeated cycles hinders their practical applicability. Here, in this report, a synergetic combination of an organic molecule and an inorganic metal, i.e., a metal-organic complex, namely, palladium hexadecylthiolate is investigated for memory device characteristics. Palladium hexadecylthiolate following partial thermolysis is converted to a molecular nanocomposite of Pd(II), Pd(0), and long chain hydrocarbons, which is shown to exhibit nonvolatile memory characteristics with exceptional stability and retention. The devices are all solution-processed and the memory action stems from filament formation across the pre-formed cracks in the nanocomposite film. (C) 2014 AIP Publishing LLC. en_US
dc.description.uri 1077-3118 en_US
dc.description.uri http://dx.doi.org/10.1063/1.4893755 en_US
dc.language.iso English en_US
dc.publisher American Institute of Physics en_US
dc.rights @American Institute of Physics, 2014 en_US
dc.subject Applied Physics en_US
dc.subject Resistive Switches en_US
dc.subject Beam Lithography en_US
dc.subject Pd Nanowires en_US
dc.subject Solid-State en_US
dc.subject Heteroacene en_US
dc.subject Precursors en_US
dc.subject Behavior en_US
dc.subject Oxide en_US
dc.title Metal-organic molecular device for non-volatile memory storage en_US
dc.type Article en_US


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