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Native defects affecting the Li atom distribution tune the optical emission of ZnO:Li epitaxial thin film

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dc.contributor.author Sahu, R.
dc.contributor.author Dileep, K.
dc.contributor.author Loukya, B.
dc.contributor.author Datta, Ranjan
dc.date.accessioned 2017-02-21T07:09:04Z
dc.date.available 2017-02-21T07:09:04Z
dc.date.issued 2014
dc.identifier.citation Sahu, R; Dileep, K; Loukya, B; Datta, R, Native defects affecting the Li atom distribution tune the optical emission of ZnO:Li epitaxial thin film. Applied Physics Letters 2014, 104 (5), 51908 http://dx.doi.org/10.1063/1.4864362 en_US
dc.identifier.citation Applied Physics Letters en_US
dc.identifier.citation 104 en_US
dc.identifier.citation 5 en_US
dc.identifier.issn 0003-6951
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/2465
dc.description Restricted Access en_US
dc.description.abstract It is found that the oxygen vacancy (V-O) defect concentration affecting the separation between individual species in Li-Zn-Li-i complex influences the optical emission property of Li0.06Zn0.94O epitaxial thin film grown by pulsed laser deposition. The film grown under low oxygen partial pressure (n-type conductivity)/higher partial pressure (resistive-type) has broad emission at similar to 2.99 eV/similar to 2.1 eV and a narrower emission at 3.63 eV/3.56 eV, respectively. First principle based mBJLDA electronic structure calculation suggests that the emission at 2.99 eV is due to the LiZn-Lii pair complex and the emission at 2.1 eV is when the component species are away from each other. (C) 2014 AIP Publishing LLC. en_US
dc.description.uri 1077-3118 en_US
dc.description.uri http://dx.doi.org/10.1063/1.4864362 en_US
dc.language.iso English en_US
dc.publisher American Institute of Physics en_US
dc.rights @American Institute of Physics, 2014 en_US
dc.subject Applied Physics en_US
dc.subject Doped ZnO en_US
dc.title Native defects affecting the Li atom distribution tune the optical emission of ZnO:Li epitaxial thin film en_US
dc.type Article en_US


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