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Phase separation and electronic structure of ZnS0.3O0.7 alloy thin film with and without (Ag, Li) co-doping

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dc.contributor.author Dileep, K.
dc.contributor.author Datta, Ranjan
dc.date.accessioned 2017-02-21T07:09:04Z
dc.date.available 2017-02-21T07:09:04Z
dc.date.issued 2014
dc.identifier.citation Dileep, K; Datta, R, Phase separation and electronic structure of ZnS0.3O0.7 alloy thin film with and without (Ag, Li) co-doping. Journal of Alloys And Compounds 2014, 586, 499-506, http://dx.doi.org/10.1016/j.jallcom.2013.10.082 en_US
dc.identifier.citation Journal of Alloys And Compounds en_US
dc.identifier.citation 586 en_US
dc.identifier.issn 0925-8388
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/2466
dc.description Restricted Access en_US
dc.description.abstract ZnS0.3O0.7 alloy thin film with and without Ag and Li co-doping are grown by pulsed laser deposition on c-plane sapphire substrate. The films are phase separated in S-rich and S-poor regions. Two and four different phases are observed to form in (Ag, Li)(0.05):Zn0.95S0.3O0.7 and ZnS0.3O0.7 films respectively. Different phases and their relative volume fractions have been identified by electron diffraction pattern. The band gap corresponding to each phase is identified by low loss region of high resolution electron energy loss spectra. Band bowing parameter upon S doping is found to be 4.12 eV which closely match with Wien2k based density functional theory calculation utilizing mBJLDA exchange correlation potential. Oxygen positions have been replaced by sulphur in the lattice as confirmed by S L-3,L-2 electron energy loss near edge absorption spectra. High resolution electron energy loss spectroscopy has been used to collect core level spectra of various dopants in order to identify their locations in the lattice. Experimental Ag M-5,M-4 extended energy loss fine structure and Li K electron energy loss near edge structure in (Ag, Li): ZnS0.3O0.7 alloy have been compared with calculated spectra using FEFF code, suggesting that Ag and Li have taken up both the substitution and interstitial positions in the lattice. All the samples are resistive with resistance in the range of a few mega-ohms. (C) 2013 Elsevier B. V. All rights reserved. en_US
dc.description.uri 1873-4669 en_US
dc.description.uri http://dx.doi.org/10.1016/j.jallcom.2013.10.082 en_US
dc.language.iso English en_US
dc.publisher Elsevier Science Sa en_US
dc.rights @Elsevier Science Sa, 2014 en_US
dc.subject Physical Chemistry en_US
dc.subject Materials Science en_US
dc.subject Metallurgy & Metallurgical Engineering en_US
dc.subject Zno1-Xsx Alloy en_US
dc.subject Electron Energy Loss Spectroscopy en_US
dc.subject Phase Separation en_US
dc.subject Pulsed-Laser-Deposition en_US
dc.subject Energy-Loss Spectroscopy en_US
dc.subject Optical-Properties en_US
dc.subject Zinc-Oxide en_US
dc.subject Degrees K en_US
dc.subject Zno en_US
dc.subject Sapphire en_US
dc.subject Dopant en_US
dc.subject Model en_US
dc.title Phase separation and electronic structure of ZnS0.3O0.7 alloy thin film with and without (Ag, Li) co-doping en_US
dc.type Article en_US


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