Enhanced thermoelectric performance in p-type AgSbSe2 by Cd-doping

Guin, Satya N.; Chatterjee, Arindom; Biswas, Kanishka

dc.contributor.author	Guin, Satya N.
dc.contributor.author	Chatterjee, Arindom
dc.contributor.author	Biswas, Kanishka
dc.date.accessioned	2017-02-21T08:58:11Z
dc.date.available	2017-02-21T08:58:11Z
dc.date.issued	2014
dc.identifier.citation	Guin, SN; Chatterjee, A; Biswas, K, Enhanced thermoelectric performance in p-type AgSbSe2 by Cd-doping. RSC Advances 2014, 4 (23) 11811-11815, http://dx.doi.org/10.1039/c4ra00969j	en_US
dc.identifier.citation	RSC Advances	en_US
dc.identifier.citation	4	en_US
dc.identifier.citation	23	en_US
dc.identifier.issn	2046-2069
dc.identifier.uri	https://libjncir.jncasr.ac.in/xmlui/10572/2495
dc.description	Restricted Access	en_US
dc.description.abstract	Thermoelectric materials can directly convert waste heat into electrical energy and will play a significant role in future energy management. Herein, we have achieved improved thermoelectric performance in p-type Te-free AgSb1-xCdxSe2 (x = 0.02-0.06) system. Simple doping of Cd2+ in the Sb3+ sublattice increases the carrier concentration, resulting in enhanced electrical conductivity in AgSb1-xCdxSe2 compared to the pristine AgSbSe2. Improved electrical transport and ultra low thermal conductivity give rise to a high thermoelectric figure of merit, ZT, of similar to 1 at similar to 640 K in AgSb0.98Cd0.02Se2, which is similar to the traditional market based expensive and scarce metal tellurides.	en_US
dc.description.uri	http://dx.doi.org/10.1039/c4ra00969j	en_US
dc.language.iso	English	en_US
dc.publisher	Royal Society of Chemistry	en_US
dc.rights	@Royal Society of Chemistry, 2014	en_US
dc.subject	Chemistry	en_US
dc.subject	Figure-Of-Merit	en_US
dc.subject	Bulk Thermoelectrics	en_US
dc.subject	Nanostructures	en_US
dc.subject	AgSbTe2	en_US
dc.subject	Disorder	en_US
dc.subject	AgBiSe2	en_US
dc.title	Enhanced thermoelectric performance in p-type AgSbSe2 by Cd-doping	en_US
dc.type	Article	en_US