dc.contributor.advisor |
Shivaprasad, S.M. |
|
dc.contributor.author |
Kuyyalil, Jithesh |
|
dc.date.accessioned |
2020-07-21T14:49:46Z |
|
dc.date.available |
2020-07-21T14:49:46Z |
|
dc.date.issued |
2012 |
|
dc.identifier.citation |
Kuyyalil, Jithesh. 2012, Study of the role of superstructural phases and interfacial properties on the growth of InN films, Ph.D. thesis, Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluru |
en_US |
dc.identifier.uri |
https://libjncir.jncasr.ac.in/xmlui/handle/10572/2924 |
|
dc.description |
Open access |
en_US |
dc.description.abstract |
Semiconductors have revolutionised many aspects of life over the past 50 years.
Techniques which have led to low cost, high density processing of silicon have resulted in
silicon integrated circuits becoming ubiquitous within modern society. The astonishing
progress which has been achieved in the processing of silicon is encompassed by Moore's
law.1
In 1965, only 5 years after the first planar integrated circuit was produced, Gordon
Moore noted that the density of transistors being fabricated on silicon integrated circuits was
doubling approximately every 2 years. Remarkably this trend has continued to the present
day and the latest generation of microprocessors now pack more than half a billion transistors
onto a square centimetre.
While the ability of semiconductors to rapidly process information may be the most
visible application, semiconductors are used in applications as wide reaching as solid state
lighting, power distribution, photovoltaics, lasers and high speed communication. When
considering which semiconductor is preferred for a given application, a number of material
properties must be considered. High frequency devices rely on high peak carrier drift
velocities along with compatibility with high k dielectrics. For light emitting applications, the
size and nature of the electronic band gap must be considered, while high power operation
requires the material to be relatively insensitive to moderate changes in temperature. |
en_US |
dc.language.iso |
English |
en_US |
dc.publisher |
Jawaharlal Nehru Centre for Advanced Scientific Research |
en_US |
dc.rights |
© 2012 JNCASR |
en_US |
dc.subject |
Semiconductors |
en_US |
dc.subject |
Group III nitride semiconductors |
en_US |
dc.subject |
InN |
en_US |
dc.subject |
InN films |
en_US |
dc.title |
Study of the role of superstructural phases and interfacial properties on the growth of InN films |
en_US |
dc.type |
Thesis |
en_US |
dc.type.qualificationlevel |
Doctoral |
en_US |
dc.type.qualificationname |
Ph.D. |
en_US |
dc.publisher.department |
Chemistry and Physics of Materials Unit (CPMU) |
en_US |