Multiferroic properties of some perovskite oxides

Abstract

Ever increasing requirement for better modern instruments and devices has led scientist to invent efficient and versatile functional data storing devices beyond the conventional magnetically information storing technology. Currently older technologies of storing the data magnetically, are approaching the perceived superparamagnetic limit and does not allow a further reduction of bit size, which subsequently limit the increase of areal density of the storage devices like hard drives. These magnetic materials, being the key of storage devices over the past few decades are already optimized. The tremendous success of hard discs now are based on improvements of the read-write head [2]. The mechanical moving parts (read-write head) of such devices are prone to failure and limit the access time which had led to the development of magnetic random access memory (MRAM.S.)[1, 35]. These can be viewed as an array of magnetic cells, each provided with a read-and-write unit or a bit (similar to the semiconducting storage device).