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Pressure induced electronic topological transition from band to topological insulator in Sb2Se3

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dc.contributor.advisor Waghmare, Umesh V.
dc.contributor.author Pal, Koushik
dc.date.accessioned 2020-07-21T14:49:53Z
dc.date.available 2020-07-21T14:49:53Z
dc.date.issued 2013
dc.identifier.citation Pal, Koushik. 2013, Pressure induced electronic topological transition from band to topological insulator in Sb2Se3, MS thesis, Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluru en_US
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/handle/10572/2945
dc.description Open access en_US
dc.description.abstract Every material consists of electrons and ions. Microscopic investigations of various macroscopic properties of a material reveal that most of the properties arise due to the interaction between the electrons and the ions and the interaction among theM.S.elves. The behavior of these atomic and subatomic particles can best be described by quantum theory very accurately. This revolutionary theory, which evolved in the beginning of the twentieth century to explain the hidden nature of an atom, was successfully applied to many probleM.S. in physics. The most successful example being the explanation of fine structure splitting of the spectral lines of H atom. With the help of quantum theory, the experimental results for the fine structure constant was reproduced very accurately [1]. The success of quantum theory leads scientist to apply it in solid state physics to explain and predict various physical properties of a material. en_US
dc.language.iso English en_US
dc.publisher Jawaharlal Nehru Centre for Advanced Scientific Research en_US
dc.rights © 2013 JNCASR en_US
dc.subject Topological transition en_US
dc.title Pressure induced electronic topological transition from band to topological insulator in Sb2Se3 en_US
dc.type Thesis en_US
dc.type.qualificationlevel Master en_US
dc.type.qualificationname MS en_US
dc.publisher.department Chemistry and Physics of Materials Unit (CPMU) en_US


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