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Effect of surface nitridation on the growth of GaN films on c-sapphire, Si(111) and Si(100) surfaces

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dc.contributor.advisor Shivaprasad, S.M.
dc.contributor.author Shetty, Satish
dc.date.accessioned 2020-07-21T14:50:02Z
dc.date.available 2020-07-21T14:50:02Z
dc.date.issued 2014
dc.identifier.citation Shetty, Satish. 2014, Effect of surface nitridation on the growth of GaN films on c-sapphire, Si(111) and Si(100) surfaces, Ph.D. thesis, Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluru en_US
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/handle/10572/2966
dc.description Open access en_US
dc.description.abstract Group III-nitrides are the most promising wide bandgap semiconducting materials for high efficiency optoelectronic device applications1,2 that operate very well without aging effects, even with very high dislocation densities. Several other semiconductors such as CdS, CdSe, ZnSe and ZnS are extensively used for short wavelength optoelectronic devices. But, due to their short lifetime and low bond energy, one cannot use these in high temperature and harsh chemical environments which limit the use of devices based on these materials. As compared to other competitive materials, GaN has bond energy of 2.3eV/bond, which is large compared to 1.2eV/bond in the case of ZnSe. The III-nitride semiconductors are well suited for devices operating at high temperatures, high current density, high frequency and in harsh chemical environments unlike the traditional Si and GaAs based semiconducting devices3,4. However, the progress in the development of nitride based optoelectronic devices towards their complete potential is hindered due to lack of native substrates, difficulties in making contacts p-type doping5,6. ZnO, an II-VI wide bandgap semiconductor, is intensively studied in recent years along with III-V materials for blue and UV optoelectronic devices. en_US
dc.language.iso English en_US
dc.publisher Jawaharlal Nehru Centre for Advanced Scientific Research en_US
dc.rights © 2014 JNCASR en_US
dc.subject Nitridation en_US
dc.title Effect of surface nitridation on the growth of GaN films on c-sapphire, Si(111) and Si(100) surfaces en_US
dc.type Thesis en_US
dc.type.qualificationlevel Doctoral en_US
dc.type.qualificationname Ph.D. en_US
dc.publisher.department Chemistry and Physics of Materials Unit (CPMU) en_US


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