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Dielectric and interface engineering strategies for polymer field effect transistors

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dc.contributor.advisor Narayan, K.S.
dc.contributor.author Senanayak, Satyaprasad P
dc.date.accessioned 2020-07-21T14:50:03Z
dc.date.available 2020-07-21T14:50:03Z
dc.date.issued 2014
dc.identifier.citation Senanayak, Satyaprasad P. 2014, Dielectric and interface engineering strategies for polymer field effect transistors, Ph.D. thesis, Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluru en_US
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/handle/10572/2967
dc.description Open access en_US
dc.description.abstract Conventional microelectronics has been the driving force for modern electronic devices, sensors, displays and energy sources. Semiconductors such as inorganic silicon and gallium arsenide, insulators like silicon dioxide, and metals such as aluminum, copper and gold have been the backbone of the semiconductor industry. The level of device fabrication has grown from small-scale integrated circuits to very large-scale integrated circuits which have resulted in efficient circuitry, faster switches and better color rendering in displays. The fundamental building block of microelectronics is the field effect transistor (FET). en_US
dc.language.iso English en_US
dc.publisher Jawaharlal Nehru Centre for Advanced Scientific Research en_US
dc.rights © 2014 JNCASR en_US
dc.subject Polymer field effect transistors en_US
dc.title Dielectric and interface engineering strategies for polymer field effect transistors en_US
dc.type Thesis en_US
dc.type.qualificationlevel Doctoral en_US
dc.type.qualificationname Ph.D. en_US
dc.publisher.department Chemistry and Physics of Materials Unit (CPMU) en_US


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