dc.contributor.advisor |
Narayan, K.S. |
|
dc.contributor.author |
Senanayak, Satyaprasad P |
|
dc.date.accessioned |
2020-07-21T14:50:03Z |
|
dc.date.available |
2020-07-21T14:50:03Z |
|
dc.date.issued |
2014 |
|
dc.identifier.citation |
Senanayak, Satyaprasad P. 2014, Dielectric and interface engineering strategies for polymer field effect transistors, Ph.D. thesis, Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluru |
en_US |
dc.identifier.uri |
https://libjncir.jncasr.ac.in/xmlui/handle/10572/2967 |
|
dc.description |
Open access |
en_US |
dc.description.abstract |
Conventional microelectronics has been the driving force for modern electronic devices, sensors, displays and energy sources. Semiconductors such as inorganic silicon and gallium arsenide, insulators like silicon dioxide, and metals such as aluminum, copper and gold have been the backbone of the semiconductor industry. The level of device fabrication has grown from small-scale integrated circuits to very large-scale integrated circuits which have resulted in efficient circuitry, faster switches and better color rendering in displays. The fundamental building block of microelectronics is the field effect transistor (FET). |
en_US |
dc.language.iso |
English |
en_US |
dc.publisher |
Jawaharlal Nehru Centre for Advanced Scientific Research |
en_US |
dc.rights |
© 2014 JNCASR |
en_US |
dc.subject |
Polymer field effect transistors |
en_US |
dc.title |
Dielectric and interface engineering strategies for polymer field effect transistors |
en_US |
dc.type |
Thesis |
en_US |
dc.type.qualificationlevel |
Doctoral |
en_US |
dc.type.qualificationname |
Ph.D. |
en_US |
dc.publisher.department |
Chemistry and Physics of Materials Unit (CPMU) |
en_US |