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Epitaxial growth of InN and InxGa1-xN nanostructured films on structurally modified substrates using MBE

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dc.contributor.advisor Shivaprasad, S.M.
dc.contributor.author De, Arpan
dc.date.accessioned 2020-07-21T14:56:49Z
dc.date.available 2020-07-21T14:56:49Z
dc.date.issued 2017
dc.identifier.citation De, Arpan. 2017, Epitaxial growth of InN and InxGa1-xN nanostructured films on structurally modified substrates using MBE, Ph.D. thesis, Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluru en_US
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/handle/10572/3003
dc.description Open access en_US
dc.description.abstract In the Semiconductor Age in last 50 years, our views, our attitudes and our way of living have been modified by the research and technological advancements made in electronic materials. Tools and gadgets like personal computers, mobile phones and Light Emitting Diodes (LED) based lighting and display gadgets, are just some of the examples among the vast number of electronic devices we use in our day to day life. In this context, the nitride based LED and Laser Diode (LD) are clear examples: the blue LED was the result of a technological breakthrough in 1994 which led to a revolution in optoelectronics, for which the prestigious Nobel prize of 2014 was awarded to Shuji Nakamura, Hiroshi Amano and Isamu Akasaki. en_US
dc.language.iso English en_US
dc.publisher Jawaharlal Nehru Centre for Advanced Scientific Research en_US
dc.rights © 2017 JNCASR en_US
dc.subject Nanostructured materials en_US
dc.title Epitaxial growth of InN and InxGa1-xN nanostructured films on structurally modified substrates using MBE en_US
dc.type Thesis en_US
dc.type.qualificationlevel Doctoral en_US
dc.type.qualificationname Ph.D. en_US
dc.publisher.department Chemistry and Physics of Materials Unit (CPMU) en_US


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