dc.contributor.advisor |
Shivaprasad, S.M. |
|
dc.contributor.author |
De, Arpan |
|
dc.date.accessioned |
2020-07-21T14:56:49Z |
|
dc.date.available |
2020-07-21T14:56:49Z |
|
dc.date.issued |
2017 |
|
dc.identifier.citation |
De, Arpan. 2017, Epitaxial growth of InN and InxGa1-xN nanostructured films on structurally modified substrates using MBE, Ph.D. thesis, Jawaharlal Nehru Centre for Advanced Scientific Research, Bengaluru |
en_US |
dc.identifier.uri |
https://libjncir.jncasr.ac.in/xmlui/handle/10572/3003 |
|
dc.description |
Open access |
en_US |
dc.description.abstract |
In the Semiconductor Age in last 50 years, our views, our attitudes and our way
of living have been modified by the research and technological advancements made in
electronic materials. Tools and gadgets like personal computers, mobile phones and Light
Emitting Diodes (LED) based lighting and display gadgets, are just some of the examples
among the vast number of electronic devices we use in our day to day life. In this context,
the nitride based LED and Laser Diode (LD) are clear examples: the blue LED was the
result of a technological breakthrough in 1994 which led to a revolution in optoelectronics,
for which the prestigious Nobel prize of 2014 was awarded to Shuji Nakamura, Hiroshi
Amano and Isamu Akasaki. |
en_US |
dc.language.iso |
English |
en_US |
dc.publisher |
Jawaharlal Nehru Centre for Advanced Scientific Research |
en_US |
dc.rights |
© 2017 JNCASR |
en_US |
dc.subject |
Nanostructured materials |
en_US |
dc.title |
Epitaxial growth of InN and InxGa1-xN nanostructured films on structurally modified substrates using MBE |
en_US |
dc.type |
Thesis |
en_US |
dc.type.qualificationlevel |
Doctoral |
en_US |
dc.type.qualificationname |
Ph.D. |
en_US |
dc.publisher.department |
Chemistry and Physics of Materials Unit (CPMU) |
en_US |