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Field emission properties of boron and nitrogen doped carbon nanotubes

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dc.contributor.author Sharma, R B
dc.contributor.author Late, D J
dc.contributor.author Joag, D S
dc.contributor.author Govindaraj, A
dc.contributor.author Rao, C N R
dc.date.accessioned 2012-02-08T06:31:03Z
dc.date.available 2012-02-08T06:31:03Z
dc.date.issued 2006-09-08
dc.identifier 0009-2614 en_US
dc.identifier.citation Chemical Physics Letters 428(1-3), 102–108 (2006) en_US
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/336
dc.description Restricted Access en_US
dc.description.abstract Field electron emission (FE) properties of boron and nitrogen doped carbon nanotubes (CNTs) grown in situ on tungsten (W) tips and silicon substrates have been studied. For a total emission current of I mu A, the current density (J) was 4 A/cm(2) at 368 V/mu m for B-doped CNTs and at 320 V/mu m for N-doped CNTs grown on W tips, compared with the value of 1.5 A/cm(2) at 290 V/mu m for undoped CNTs. FE currents upto 400 mu A drawn from both B- and N-doped CNTs are stable for more than 3 h. (c) 2006 Elsevier B.V. All rights reserved. en_US
dc.description.uri http://dx.doi.org/10.1016/j.cplett.2006.06.089 en_US
dc.language.iso en en_US
dc.publisher Elsevier Science BV en_US
dc.rights © 2006 Elsevier BV en_US
dc.subject Large-Scale Synthesis en_US
dc.subject Pyrolysis en_US
dc.title Field emission properties of boron and nitrogen doped carbon nanotubes en_US
dc.type Article en_US


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