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Anharmonic self energies of phonons in silicon

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dc.contributor.author Narasimhan, Shobhana
dc.contributor.author Vanderbilt, David
dc.date.accessioned 2012-02-10T08:44:58Z
dc.date.available 2012-02-10T08:44:58Z
dc.date.issued 1991-02-15
dc.identifier 0163-1829 en_US
dc.identifier.citation Physical Review B 43(5), 4541-4544 (1991) en_US
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/375
dc.description Restricted Access en_US
dc.description.abstract We have carried out a realistic ab initio calculation of the contribution of cubic anharmonicity to the inverse lifetime GAMMA and the frequency shift DELTA of phonons in silicon. The cubic coupling constants for phonons throughout the Brillouin zone are obtained from an anharmonic Keating-type lattice-dynamical model, which has been fit to a database of results from local-density-approximation frozen-phonon and elastic-modulus calculations. GAMMA and DELTA have been calculated as a function of temperature T and wave vector. Our results agree reasonably well with experiment, but indicate the need for retention of quartic and higher-order terms, especially at high T. en_US
dc.description.uri http://dx.doi.org/10.1103/PhysRevB.43.4541 en_US
dc.language.iso en en_US
dc.publisher American Physical Society en_US
dc.rights © 1991 American Physical Society en_US
dc.subject Raman-Scattering en_US
dc.subject Temperature-Dependence en_US
dc.subject Si en_US
dc.subject Ge en_US
dc.subject Dynamics en_US
dc.subject Sn en_US
dc.title Anharmonic self energies of phonons in silicon en_US
dc.type Article en_US


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