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Doped and undoped ITO nanowires

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dc.contributor.author Kalyanikutty, K P
dc.contributor.author Gundiah, Gautam
dc.contributor.author Edem, Christopher
dc.contributor.author Govindaraj, A
dc.contributor.author Rao, C N R
dc.date.accessioned 2012-02-13T09:24:09Z
dc.date.available 2012-02-13T09:24:09Z
dc.date.issued 2005-06-17
dc.identifier 0009-2614 en_US
dc.identifier.citation Chemical Physics Letters 408(4-6), 389-394 (2005) en_US
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/390
dc.description Restricted Access en_US
dc.description.abstract Sn-doped In2O3 (ITO) nanowires have been prepared by carbon-assisted synthesis starting with a powdered mixture of the metal nitrates or with a citric acid gel formed by the metal nitrates. Copious quantities of nanowires could be grown on gold-sputtered Si substrates. The ITO nanowires were single-crystalline and optically transparent. In2O3 nanowires doped with both Sn and Zn can also be prepared by the procedures described. (c) 2005 Elsevier B.V. All rights reserved. en_US
dc.description.uri http://dx.doi.org/10.1016/j.cplett.2005.04.037 en_US
dc.language.iso en en_US
dc.publisher Elsevier Science BV en_US
dc.rights © 2005 Elsevier BV en_US
dc.subject Transparent Conducting Oxides en_US
dc.subject Inorganic Nanowires en_US
dc.subject Growth en_US
dc.subject In2o3 en_US
dc.subject Films en_US
dc.title Doped and undoped ITO nanowires en_US
dc.type Article en_US


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