dc.contributor.author |
Kalyanikutty, K P
|
|
dc.contributor.author |
Gundiah, Gautam
|
|
dc.contributor.author |
Edem, Christopher
|
|
dc.contributor.author |
Govindaraj, A
|
|
dc.contributor.author |
Rao, C N R
|
|
dc.date.accessioned |
2012-02-13T09:24:09Z |
|
dc.date.available |
2012-02-13T09:24:09Z |
|
dc.date.issued |
2005-06-17 |
|
dc.identifier |
0009-2614 |
en_US |
dc.identifier.citation |
Chemical Physics Letters 408(4-6), 389-394 (2005) |
en_US |
dc.identifier.uri |
https://libjncir.jncasr.ac.in/xmlui/10572/390 |
|
dc.description |
Restricted Access |
en_US |
dc.description.abstract |
Sn-doped In2O3 (ITO) nanowires have been prepared by carbon-assisted synthesis starting with a powdered mixture of the metal nitrates or with a citric acid gel formed by the metal nitrates. Copious quantities of nanowires could be grown on gold-sputtered Si substrates. The ITO nanowires were single-crystalline and optically transparent. In2O3 nanowires doped with both Sn and Zn can also be prepared by the procedures described. (c) 2005 Elsevier B.V. All rights reserved. |
en_US |
dc.description.uri |
http://dx.doi.org/10.1016/j.cplett.2005.04.037 |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
Elsevier Science BV |
en_US |
dc.rights |
© 2005 Elsevier BV |
en_US |
dc.subject |
Transparent Conducting Oxides |
en_US |
dc.subject |
Inorganic Nanowires |
en_US |
dc.subject |
Growth |
en_US |
dc.subject |
In2o3 |
en_US |
dc.subject |
Films |
en_US |
dc.title |
Doped and undoped ITO nanowires |
en_US |
dc.type |
Article |
en_US |