dc.contributor.author |
Panchokarla, L S
|
|
dc.contributor.author |
Subrahmanyam, K S
|
|
dc.contributor.author |
Saha, S K
|
|
dc.contributor.author |
Govindaraj, Achutharao
|
|
dc.contributor.author |
Krishnamurthy, H R
|
|
dc.contributor.author |
Waghmare, U V
|
|
dc.contributor.author |
Rao, C N R
|
|
dc.date.accessioned |
2012-02-22T08:37:12Z |
|
dc.date.available |
2012-02-22T08:37:12Z |
|
dc.date.issued |
2009-12-11 |
|
dc.identifier |
0935-9648 |
en_US |
dc.identifier.citation |
Advanced Materials 21(46), 4726-4730 (2009) |
en_US |
dc.identifier.uri |
https://libjncir.jncasr.ac.in/xmlui/10572/490 |
|
dc.description |
Restricted Access |
en_US |
dc.description.abstract |
Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed. |
en_US |
dc.description.sponsorship |
CSIR, New Delhi.
JNCASR. |
en_US |
dc.description.uri |
http://dx.doi.org/10.1002/adma.200901285 |
en_US |
dc.language.iso |
en |
en_US |
dc.publisher |
Wiley-V C H Verlag Gmbh |
en_US |
dc.rights |
© 2009 Wiley-V C H Verlag Gmbh & Co |
en_US |
dc.subject |
Carbon Nanotubes |
en_US |
dc.subject |
Approximation |
en_US |
dc.title |
Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene |
en_US |
dc.type |
Article |
en_US |