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Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene

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dc.contributor.author Panchokarla, L S
dc.contributor.author Subrahmanyam, K S
dc.contributor.author Saha, S K
dc.contributor.author Govindaraj, Achutharao
dc.contributor.author Krishnamurthy, H R
dc.contributor.author Waghmare, U V
dc.contributor.author Rao, C N R
dc.date.accessioned 2012-02-22T08:37:12Z
dc.date.available 2012-02-22T08:37:12Z
dc.date.issued 2009-12-11
dc.identifier 0935-9648 en_US
dc.identifier.citation Advanced Materials 21(46), 4726-4730 (2009) en_US
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/490
dc.description Restricted Access en_US
dc.description.abstract Boron- and nitrogen-doped graphenes are are prepared by the arc discharge between carbon electrodes or by the transformation of nanodiamond under appropriate atmospheres. Using a combination of experiment and theories based on first principles, systematic changes in the carrier-concentration and electronic structure of the doped graphenes are demonstrated. Stiffening of the G-band mode and intensification of the defect-related D-band in the Raman spectra are also observed. en_US
dc.description.sponsorship CSIR, New Delhi. JNCASR. en_US
dc.description.uri http://dx.doi.org/10.1002/adma.200901285 en_US
dc.language.iso en en_US
dc.publisher Wiley-V C H Verlag Gmbh en_US
dc.rights © 2009 Wiley-V C H Verlag Gmbh & Co en_US
dc.subject Carbon Nanotubes en_US
dc.subject Approximation en_US
dc.title Synthesis, Structure, and Properties of Boron- and Nitrogen-Doped Graphene en_US
dc.type Article en_US


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