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Single-walled carbon nanotube bundles intercalated with semiconductor nanoparticles

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dc.contributor.author Nath, Manashi
dc.contributor.author Teredesai, Pallavi V
dc.contributor.author Muthu, D V S
dc.contributor.author Sood, A K
dc.contributor.author Rao, C N R
dc.date.accessioned 2012-03-14T06:29:32Z
dc.date.available 2012-03-14T06:29:32Z
dc.date.issued 2003-10-10
dc.identifier 0011-3891 en_US
dc.identifier.citation Current Science 85(7), 956-960 (2003) en_US
dc.identifier.uri https://libjncir.jncasr.ac.in/xmlui/10572/606
dc.description Open Access en_US
dc.description.abstract Nanoparticles of CdSe, CdS and ZnSe have been incorporated in the inter-tubular gaps of single-walled carbon nanotube (SWNT) bundles. Electron microscope, X-ray diffraction (XRD), electronic spectroscopy and Raman studies have been employed to characterize these systems. The lengths of the intercalate inside the bundles could be varied by changing the reaction conditions. Electronic absorption and photoluminescence studies from the semiconductor intercalates show the expected blue-shift with respect to the corresponding bulk samples in CdS and ZnS samples. The SWNT lattice is expanded on incorporating CdSe as confirmed by XRD in the low-angle range. The expansion in the lattice is also corroborated by the Raman measurements which show a considerable red-shift for both the radial and the tangential modes of the SWNT signal, thus signifying an increase in the van der Waals gap between the tubes in the bundle. The red-shift of the Raman signal is due to the decrease in the inter-tube interactions as well as due to doping effects. en_US
dc.description.uri http://eprints.iisc.ernet.in/17350/ en_US
dc.description.uri http://www.iisc.ernet.in/currsci/oct102003/956.pdf en_US
dc.language.iso en en_US
dc.publisher Current Science Association en_US
dc.rights © 2003 Current Science Association en_US
dc.subject Raman-Scattering en_US
dc.subject Field-Emission en_US
dc.subject Pressure en_US
dc.title Single-walled carbon nanotube bundles intercalated with semiconductor nanoparticles en_US
dc.type Article en_US


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