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Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes
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| dc.contributor.author | Late, Dattatray J
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| dc.contributor.author | Ghosh, Anupama
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| dc.contributor.author | Subrahmanyam, K S
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| dc.contributor.author | Panchakarla, L S
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| dc.contributor.author | Krupanidhi, S B
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| dc.contributor.author | Rao, C N R
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| dc.date.accessioned | 2012-11-08T06:46:40Z | |
| dc.date.available | 2012-11-08T06:46:40Z | |
| dc.date.issued | 2010-04 | |
| dc.identifier | 0038-1098 | en_US |
| dc.identifier.citation | Solid State Communications 150(15-16), 734-738 (2010) | en_US |
| dc.identifier.uri | https://libjncir.jncasr.ac.in/xmlui/10572/948 | |
| dc.description | Restricted Access | en_US |
| dc.description.abstract | Field-effect transistor characteristics of few-layer graphenes prepared by several methods have been investigated in comparison with those of single-layer graphene prepared by the in situ reduction of single-layer graphene oxide. Ambipolar features have been observed with single-layer graphene and n-type behaviour with all the few-layer graphenes, the best characteristics being found with the graphene possessing 2–3 layers prepared by arc-discharge of graphite in hydrogen. FETs based on boron and nitrogen doped graphene show n-type and p-type behaviour respectively. | en_US |
| dc.description.uri | http://dx.doi.org/10.1016/j.ssc.2010.01.030 | en_US |
| dc.language.iso | en | en_US |
| dc.publisher | Elsevier | en_US |
| dc.rights | © 2010 Elsevier Ltd | en_US |
| dc.subject | Graphene | en_US |
| dc.subject | Field-effect transistor | en_US |
| dc.subject | Mobility | en_US |
| dc.subject | Doping | en_US |
| dc.title | Characteristics of field-effect transistors based on undoped and B- and N-doped few-layer graphenes | en_US |
| dc.type | Article | en_US |
