Please use this identifier to cite or link to this item: https://libjncir.jncasr.ac.in/xmlui/handle/10572/1004
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dc.contributor.authorChitara, Basant-
dc.contributor.authorLal, Nidhi-
dc.contributor.authorKrupanidhi, S B-
dc.contributor.authorRao, C N R-
dc.date.accessioned2012-11-19T10:36:56Z-
dc.date.available2012-11-19T10:36:56Z-
dc.date.issued2011-12-
dc.identifier0022-2313en_US
dc.identifier.citationJournal of Luminescence 131(12), 2612-2615 (2011)en_US
dc.identifier.urihttps://libjncir.jncasr.ac.in/xmlui/10572/1004-
dc.descriptionRestricted Accessen_US
dc.description.abstractInorganic and organic semiconductor devices are generally viewed as distinct and separate technologies. Herein we report a hybrid inorganic-organic light-emitting device employing the use of an air stable polymer, Poly (9,9-dioctylfluorene-alt-benzothiadiazole) as a p-type layer to create a heterojunction, avoiding the use of p-type GaN, which is difficult to grow, being prone to the complex and expensive fabrication techniques that characterises it. I-V characteristics of the GaN-polymer heterojunction fabricated by us exhibits excellent rectification. The luminescence onset voltage is typically about 8-10 V. The device emits yellowish white electroluminescence with CIE coordinates (0.42, 0.44). (C) 2011 Elsevier B.V. All rights reserved.en_US
dc.description.urihttp://dx.doi.org/10.1016/j.jlumin.2011.04.027en_US
dc.language.isoenen_US
dc.publisherElsevier Science BVen_US
dc.rights© 2011 Elsevier Science BVen_US
dc.subjectElectroluminescenceen_US
dc.subjectGaNen_US
dc.subjectInorganic-Organic heterojunctionen_US
dc.subjectLight-Emitting-Diodesen_US
dc.subjectLaser-Diodesen_US
dc.subjectBlueen_US
dc.subjectDevicesen_US
dc.titleElectroluminescence from GaN-polymer heterojunctionen_US
dc.typeArticleen_US
Appears in Collections:Research Papers (Prof. C.N.R. Rao)

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